DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 8541210000 | TRANSISTOR, P / N NX3008NBKS, MOS transistors, the number of channels 2, the breakdown voltage of the drain-source 30, continuous current LEAKAGE 350 MA - 1,4 SOURCE DRAIN RESISTANCE OM VOLTAGE gate-source 8, the minimum operating temperature - 55 C, MAX: Working | *** | PHILIPPINES | 0.24 | 606,13 | *** | ***** | ***** |
2017-09-04 | 8541210000 | TRANSISTOR, P / N BD140-16, a bipolar transistor BJT, the maximum voltage 80 V COLLECTOR emitter, collector voltage BASE 80 V BASE TENSION emitter 5 V, a maximum constant collector current 1,5A, gain-: WIDTH ON | *** | PHILIPPINES | 4.28 | 203,38 | *** | ***** | ***** |
2017-09-06 | 8541210000 | P-CHANNEL POWER MOS TRANSISTORS "FDN5618P", C 0.5 Tu power dissipation, drain-source voltage 60 V, gate-source voltage 20B, Imp. Drain current 10A, Predna. FOR A current converters, switches, loads diagram of the control PI: TA | *** | PHILIPPINES | 0.13 | 165 | *** | ***** | ***** |
2017-09-29 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W: bipolar transistor PNP TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage (VCEO), max. - 45 V, maximum constant collector current: - 0.1 A, POWER PAC | *** | PHILIPPINES | 0.7 | 53,01 | *** | ***** | ***** |