| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-09 | 8541210000 | Bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, the maximum collector current of 100 mA. CASING SOT-23-3. Power dissipation 0.3 Tues. Located on the tape, packed in plastic bags. : ON SEMICONDU | *** | THAILAND | 0.01 | 0,8 | *** | ***** | ***** |
| 2017-09-09 | 8541210000 | PNP bipolar transistors TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, a collector current of 100 mA, the power dissipation of 0.3 TSR. CASING SOT-23-3. LOCATED ON TAPE PACKED: In | *** | THAILAND | 0.01 | 0,9 | *** | ***** | ***** |
| 2017-09-09 | 8541210000 | MOSFETs with channel N / P SMD TYPE USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, LEAKAGE CURRENT 0.51 A, the power dissipation of 0.96 CS. BODY SOIC-8. Located on the tape, the UPA: KO | *** | THAILAND | 0.02 | 24,64 | *** | ***** | ***** |
| 2017-09-09 | 8541210000 | MOSFETs with channel P type intended for devices of industrial electronics. Breakdown voltage of the drain-source of 100 V, LEAKAGE CURRENT 0.12 A 360 MW. CASING SOT-23-3. LOCATED in the tape, packed in a plastic bag. : MICROCHIP TECH | *** | THAILAND | 0.05 | 41,27 | *** | ***** | ***** |
| 2017-09-12 | 8541210000 | SEMICONDUCTOR TRANSISTORS: DUAL MOSFET N - CHANNEL, power dissipation 0.31 VT, the voltage source-drain 20, current 0.75 A CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT ON SEMICONDUCTOR ON SEMICONDUCT | *** | THAILAND | 0.01 | 3,49 | *** | ***** | ***** |
| 2017-09-12 | 8541210000 | SEMICONDUCTOR TRANSISTORS: MOSFET P-channel, power dissipation of 540 MW, the voltage source-drain 20 V, current 780 MA CLASSIFICATION CODE 6340128 FOR PCB RADIO EQUIPMENT INFINEON TECHNOLOGIES INFINEON IRLML6302 | *** | THAILAND | 0 | 3,37 | *** | ***** | ***** |
| 2017-09-25 | 8541210000 | TRANSISTOR. MODEL "BC847B, 215" -33 pcs. The product is a semiconductor transistor NPN-C TYPE DISPERSION CAPACITY 250 milli-watts and a collector-emitter voltage of 45 volts. Is designed in surface mount package. : NEXPERIA NEXPE | *** | THAILAND | 0.01 | 4,7 | *** | ***** | ***** |
| 2017-09-25 | 8541210000 | TRANSISTOR. MODEL "BC817-40,215" -64 pcs. The product is a bipolar transistor with a semiconductor NPN-TYPE DISPERSION WITH MAXIMUM CAPACITY 250 milli-watts and a voltage between the collector-emitter to 45 volts. Is designed in: Housing for | *** | THAILAND | 0.01 | 9,62 | *** | ***** | ***** |
| 2017-09-25 | 8541210000 | TRANSISTOR. MODEL "BC848ALT1G" -883 PCS. The product is a bipolar transistor with the maximum power DISPERSION 225 milli-watts and a voltage between the collector-emitter to 30 volts. : Semiconductors NPN-type. STRUCTURAL made in the case SAT-23 | *** | THAILAND | 0.02 | 38,4 | *** | ***** | ***** |
| 2017-09-27 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, used in the system of industrial electronics bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 50 V, maximum collector current 0.5 | *** | THAILAND | 0.01 | 1,99 | *** | ***** | ***** |