Voltag Import Data of Russia

Search Russia Import Export Data at Shipment Level

Lookup import statistics of Voltag under HS Code 8541290000, which Russia imports from Taiwan China. Study market price & market size of Voltag along with market share of Russian companies importing Voltag from Taiwan China

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DATE HS_CODE Product Description TrademarkCountry Net Weight Statistical Cost Place Shipper NameConsignee Name
2017-09-018541290000MOS transistors for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on 100 BREAKDOWN VOLTAGE***TAIWAN CHINA0.21821,32*************
2017-09-018541290000MOS transistors for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30***TAIWAN CHINA03,09*************
2017-09-048541290000MOSFET ASSEMBLY TYPE: SMD / SMT, VGS - gate-source voltage: 20 V, PD - power dissipation of 150 W, RISE TIME: 15 NS, SERIES: IXTA3N120. Used in various schemes for TV, audio, video and radio broadcasting, MOBILE DEVICES: COMMUNICATION /***TAIWAN CHINA0.1187,08*************
2017-09-048541290000MOSFET ASSEMBLY TYPE: SMD / SMT, VGS - gate-source voltage: 20 V, Resistance Drain-26 MOHMS, power dissipation: 1.79 W. used in various schemes for TV, audio, video and broadcasting, in device CELLULAR / NOT FOR: Consumer***TAIWAN CHINA08,96*************
2017-09-058541290000TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 950, CURRENT LEAKAGE 38 A, the power dissipation***TAIWAN CHINA0.16186,68*************
2017-09-068541290000TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. VOLTAGE Drain-Source Breakdown 70 V, 35 A LEAKAGE CURRENT, POWER 40 CS. lint***TAIWAN CHINA18.85141,75*************
2017-09-108541290000SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, CREATE ELECTROMAGNETIC INTERFERENCE: TRANSISTOR FIELD OF DISPERSION maximum power of 150 W, the maximum drain-source voltage of 200 V, 18 A FORCE TO CURRENT***TAIWAN CHINA0.0527,73*************
2017-09-198541290000N-channel MOS transistor. Maximum Power Dissipation 60W. The maximum voltage of 30 V. CURRENT 60A. SERIES STRIPFET V. Dimensions 5 X 6 X 0.81MM. NOT AN ELECTRICAL CROWBAR. Used for electrical purposes: STMICROELECTRONICS STMICROELECTRONICS***TAIWAN CHINA0.011,72*************
2017-09-218541290000Other transistors, phototransistor EXCEPT: MOSFETs with channel N type intended for devices of industrial electronics. Breakdown voltage of the drain-source of 100 V, 1.7 A LEAKAGE CURRENT, POWER 2 watts. CASING SOT-223-4. LOCATED in the tape, pack***TAIWAN CHINA0.012,75*************
2017-09-218541290000Other transistors, phototransistor EXCEPT: MOSFETs with channel N TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. VOLTAGE Drain-Source Breakdown 25 V, 60 A LEAKAGE CURRENT, power dissipation 3W. HOUSING***TAIWAN CHINA0.0215,82*************


Our voltag import data of Russia and market research report covers market priceof voltag and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of voltag in Russia. Few shipment records with a small number of important columns from Russia import data of voltag are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of voltag. To view more shipment records of voltag import data of Russia, you can set a filter by Country Name, HS Code and Place.

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