DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | MOS transistors for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on 100 BREAKDOWN VOLTAGE | *** | TAIWAN CHINA | 0.2 | 1821,32 | *** | ***** | ***** |
2017-09-01 | 8541290000 | MOS transistors for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 | *** | TAIWAN CHINA | 0 | 3,09 | *** | ***** | ***** |
2017-09-04 | 8541290000 | MOSFET ASSEMBLY TYPE: SMD / SMT, VGS - gate-source voltage: 20 V, PD - power dissipation of 150 W, RISE TIME: 15 NS, SERIES: IXTA3N120. Used in various schemes for TV, audio, video and radio broadcasting, MOBILE DEVICES: COMMUNICATION / | *** | TAIWAN CHINA | 0.1 | 187,08 | *** | ***** | ***** |
2017-09-04 | 8541290000 | MOSFET ASSEMBLY TYPE: SMD / SMT, VGS - gate-source voltage: 20 V, Resistance Drain-26 MOHMS, power dissipation: 1.79 W. used in various schemes for TV, audio, video and broadcasting, in device CELLULAR / NOT FOR: Consumer | *** | TAIWAN CHINA | 0 | 8,96 | *** | ***** | ***** |
2017-09-05 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 950, CURRENT LEAKAGE 38 A, the power dissipation | *** | TAIWAN CHINA | 0.16 | 186,68 | *** | ***** | ***** |
2017-09-06 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. VOLTAGE Drain-Source Breakdown 70 V, 35 A LEAKAGE CURRENT, POWER 40 CS. lint | *** | TAIWAN CHINA | 18.8 | 5141,75 | *** | ***** | ***** |
2017-09-10 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, CREATE ELECTROMAGNETIC INTERFERENCE: TRANSISTOR FIELD OF DISPERSION maximum power of 150 W, the maximum drain-source voltage of 200 V, 18 A FORCE TO CURRENT | *** | TAIWAN CHINA | 0.05 | 27,73 | *** | ***** | ***** |
2017-09-19 | 8541290000 | N-channel MOS transistor. Maximum Power Dissipation 60W. The maximum voltage of 30 V. CURRENT 60A. SERIES STRIPFET V. Dimensions 5 X 6 X 0.81MM. NOT AN ELECTRICAL CROWBAR. Used for electrical purposes: STMICROELECTRONICS STMICROELECTRONICS | *** | TAIWAN CHINA | 0.01 | 1,72 | *** | ***** | ***** |
2017-09-21 | 8541290000 | Other transistors, phototransistor EXCEPT: MOSFETs with channel N type intended for devices of industrial electronics. Breakdown voltage of the drain-source of 100 V, 1.7 A LEAKAGE CURRENT, POWER 2 watts. CASING SOT-223-4. LOCATED in the tape, pack | *** | TAIWAN CHINA | 0.01 | 2,75 | *** | ***** | ***** |
2017-09-21 | 8541290000 | Other transistors, phototransistor EXCEPT: MOSFETs with channel N TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. VOLTAGE Drain-Source Breakdown 25 V, 60 A LEAKAGE CURRENT, power dissipation 3W. HOUSING | *** | TAIWAN CHINA | 0.02 | 15,82 | *** | ***** | ***** |