DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | TAIWAN CHINA | 30.72 | 56860,8 | *** | ***** | ***** |
2017-09-01 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | TAIWAN CHINA | 33.28 | 61599,2 | *** | ***** | ***** |
2017-09-05 | 8542323900 | Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 DIMM 1600 MHz (PC3-12800) 240-PIN NON-ECC, reservoirs 8 GB 2 X (512 MB X 8), 1.35 VOLTAGE OR PERMANENT 1.5 CURRENT is used in industry COM | *** | TAIWAN CHINA | 0.05 | 91,01 | *** | ***** | ***** |
2017-09-05 | 8542323900 | Electronic integrated circuits, MODEL "EDB8132B4PB-8D-F" - 17 PCS. The product is a synchronous dynamic random access memory of 8 GB and operating frequency to 400MHz. Operating voltage up to 1.8 V.: formed as an integrated MES | *** | TAIWAN CHINA | 0.52 | 198,56 | *** | ***** | ***** |
2017-09-12 | 8542323900 | Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 1600 MHz 204-PIN (PC3-12800), Capacity 8 GB 2 X (512 MB X 8), 1.35 VOLTAGE OR 1.5 VDC , used in industry Compute | *** | TAIWAN CHINA | 2.4 | 5850,48 | *** | ***** | ***** |
2017-09-18 | 8542323900 | Dynamic random access memory (DRAM) BASED ON MEMORY MODULE FORM FACTOR DDR3 SO-DIMM the ECC 1600 MHz, Capacity 4 GB, 1.35 OR SUPPLY VOLTAGE 1.5 V DC, used in industrial computer as a RAM, | *** | TAIWAN CHINA | 0.19 | 216,05 | *** | ***** | ***** |
2017-09-18 | 8542323900 | Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR2 SO-DIMM 667 MHz 200-PIN, reservoirs 2 GB 2 X (128 MB X 8) VOLTAGE POWER 1.8 VDC, used in industrial computer as promptly | *** | TAIWAN CHINA | 0.24 | 420,06 | *** | ***** | ***** |
2017-09-27 | 8542323900 | Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 SO-DIMM 1066 204-PIN (PC3-8500), capacitance 4 GB 2 X (256 MB X 8) VOLTAGE POWER 1.5 VDC, is used Industrial Computers In QUALITY | *** | TAIWAN CHINA | 0.14 | 99,03 | *** | ***** | ***** |
2017-09-27 | 8542323900 | Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR4 SO-DIMM 2133 MHz 260-PIN (PC4-17000), 4 GB Capacity (MB 512 X 8) VOLTAGE POWER 1.2 VDC, COMPUTERS IN THE INDUSTRIAL USE AS | *** | TAIWAN CHINA | 0.48 | 510,09 | *** | ***** | ***** |
2017-09-27 | 8542323900 | Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR 1600 MHz DDR3 DIMM 240-PIN (PC3-12800), Capacity 8 GB 2 X (512 MB X 8) VOLTAGE POWER 1.5 VDC, COMPUTERS IN THE INDUSTRIAL USE AS | *** | TAIWAN CHINA | 0.96 | 1580,17 | *** | ***** | ***** |