DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-07 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH Memory capacity of 1 Mbit is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.02 | 6,87 | *** | ***** | ***** |
2017-09-07 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16Mb is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.02 | 9,98 | *** | ***** | ***** |
2017-09-13 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH Memory capacity of 1 Mbit is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.08 | 34,32 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 64 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 10.3 | 4600 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 4 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special TE | *** | TAIWAN CHINA | 0.9 | 400 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 32 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 28.5 | 12880 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 32 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 2.8 | 1440 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Integrated circuits, monolithic, digital, flash electrically erasable programmable read-only memory (flash EEPROM) W25Q64JVSSIQ, VOLUME 64Mbit, 8-pin input voltage 2.7-3.6V, TV MODELS FOR PROM.SBORKI UE43LS003AUXRU, HAS 1107-002574 | *** | TAIWAN CHINA | 1.3 | 684,12 | *** | ***** | ***** |
2017-09-21 | 8542326100 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 1.45 V Operating temperature 0 to + 95 512M: MICRON TECHNOLOGY INC WITHOUT TK B / M MT41K512M16HA-125: A B / M 200 | *** | TAIWAN CHINA | 0.82 | 2508,88 | *** | ***** | ***** |
2017-09-24 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 64 Mbit is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.41 | 3550 | *** | ***** | ***** |