| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-05 | 1905321100 | WAFER completely covered with chocolate in immediate packings of a content not exceeding 85 g, packaged for retail sale does not contain GMO, TO CARRY THROUGH CHAIN ​​STORE __ 1.0__ "Sequoia" waffles with chocolate glaze with strawberry cream, 20G __1.1__ mfd | Furuta, JAPAN | JAPAN | 29.52 | 325,03 | MOSCOW | ***** | ***** |
| 2017-09-07 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer SI D200 PP + R10-13 / T5.5-6.5 diameter 200 mm, P + type (boron doped). INTENDED FOR USE IN THE PRODUCTION OF INTEGRATED CIRCUITS. SUM | *** | JAPAN | 2.6 | 4111,39 | *** | ***** | ***** |
| 2017-09-08 | 9026202000 | Differential pressure sensor (transducer), an electron in a metal casing, complete with fixing elements (bolts, nuts, wafers), DESIGNED FOR MEASURING PRESSURE AND CONTROL PROCESS EQUIPMENT FIELD GAS TOTAL: 1 K | *** | JAPAN | 4.9 | 2221,4 | *** | ***** | ***** |
| 2017-09-11 | 3818001000 | High-resistivity silicon wafer. Diameter of 100 mm, thickness of 460 microns. SOURCE MATERIAL FOR MANUFACTURING CRYSTAL INTEGRATED CIRCUITS: GREAT ASCENT INTERNATIONAL LIMITED GREAT ASCENT INTERNATIONAL LIMITED 100 | *** | JAPAN | 2.4 | 7170 | *** | ***** | ***** |
| 2017-09-15 | 8542319010 | PLATE SEMICONDUCTOR SILICON STILL does not cut on a chip, round shape with a diameter of 300mm, thickness 775MKM. Wafer intended for production of semiconductor crystals (prepared by the method cutting): used to | *** | JAPAN | 34 | 212322,59 | *** | ***** | ***** |
| 2017-09-17 | 8541100009 | Other diodes, photodiodes THAN OR light-emitting diodes: diodes - a semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics: diodes Transient Voltage Suppressors (TVS). REVERSE | *** | JAPAN | 0.04 | 84,75 | *** | ***** | ***** |
| 2017-09-17 | 8541100009 | Other diodes, photodiodes THAN OR light-emitting diodes: diodes - a semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics: Schottky diodes. Forward current 3 A, Reverse Voltage 40V is not | *** | JAPAN | 0.01 | 2,17 | *** | ***** | ***** |
| 2017-09-19 | 8481309108 | Industrial valves: VALVES (wafer) made of stainless. STALI.PREDNAZNACHENY to be installed in the pipeline for PREDOTRASCHENIYA backflow WORKING SREDY.NE military purposes. It is not an element of automatic software:: | *** | JAPAN | 47.1 | 6284,52 | *** | ***** | ***** |
| 2017-09-19 | 8541100009 | DIODES - the semiconductor wafer is cut into the crystal (located in the same building), for devices of industrial electronics, ARE NOT diode grounders DEVICES catenary CLASSIFICATION CODE 6340112: Schottky diodes, reverse voltage of 40 V, DIRECT | *** | JAPAN | 0.21 | 34,07 | *** | ***** | ***** |
| 2017-09-20 | 8536902000 | PROBES FOR VERIFICATION wafer, a standard spring with a pitch USE 100um, voltage 10V, PROBE MATERIAL - TUNGSTEN: Used as a single contact in the contact assemblies (PROBE HEAD) ELEKETRONNYH testers. PROBES CT | *** | JAPAN | 0.3 | 1462,98 | *** | ***** | ***** |