DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-12 | 8542399010 | Monolithic integrated circuits AS silicon wafers 300 mm in diameter is not cut on a chip fabricated with complementary metal-oxide-semiconductor formed thereon WITH RELATED ENTITIES TYPE - transistors. : LOT: 7CRP220 | *** | SINGAPORE | 5.7 | 10954,94 | *** | ***** | ***** |
2017-09-20 | 8481808508 | Rotary disk wafer with worm gear (LEVER HANDLE WITH STEEL-toothed POINT TO ANGLE) into the body of cast iron with BRONZE rims, designed for installation in a locking-control device: blocked | *** | SINGAPORE | 10.89 | 971,88 | *** | ***** | ***** |
2017-09-20 | 8542399010 | Monolithic integrated circuits AS silicon wafers 300 mm in diameter is not cut on a chip fabricated with complementary metal-oxide-semiconductor formed thereon WITH RELATED ENTITIES TYPE - transistors. : LOT: 7CRP220 | *** | SINGAPORE | 5.6 | 9164,67 | *** | ***** | ***** |
2017-09-22 | 8541100009 | DIODES - the semiconductor wafer is cut into the crystal (located in the same building), for devices of industrial electronics, ARE NOT diode grounders DEVICES catenary CLASSIFICATION CODE 6340112: Schottky diodes, reverse voltage of 40 V, DIRECT | *** | SINGAPORE | 0.04 | 38,67 | *** | ***** | ***** |
2017-09-22 | 8541100009 | DIODES - the semiconductor wafer is cut into the crystal (located in the same building), for devices of industrial electronics, ARE NOT diode grounders DEVICES catenary CLASSIFICATION CODE 6340112: DIODE VOLTAGE SUPPRESSION Transient | *** | SINGAPORE | 0.02 | 18,33 | *** | ***** | ***** |
2017-09-22 | 8541100009 | DIODES - the semiconductor wafer is cut into the crystal (located in the same building), for devices of industrial electronics, ARE NOT diode grounders DEVICES catenary CLASSIFICATION CODE 6340112: DIODE VOLTAGE SUPPRESSION Transient | *** | SINGAPORE | 0.29 | 101,62 | *** | ***** | ***** |
2017-10-17 | 9022900000 | The X-ray spectrometry equipment, ARE FREE OF SOURCES AND IONIZING RADIATION: used in the plant for analysis of impurity elements on the surface of silicon wafers in the production of integrated circuits. CO | *** | SINGAPORE | 6 | 35021 | *** | ***** | ***** |
2017-11-29 | 8542311009 | Electronic integrated circuits Monolithic in the form of silicon wafers 200 mm in diameter, is not cut on crystals produced under PROCESS 180nm fabricated with 5-L1818-16A-1833ZZ-000-BCB, MODEL COCPUM5IC, CM. FURTHER TECHNICAL DETAILS | GLOBALFOUNDRIES | SINGAPORE | 3.05 | 7655,44 | SINGAPORE | ***** | ***** |