Wafer Import Data of Russia

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-09-05	3818009000	Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm MADE gallium arsenide (GAAS), on whose surface Apply epitaxial heterostructures FROM thin layers of gallium arsenide (GAAS) and aluminum arsenide gallium (: AL	***	TAIWAN CHINA	0.68	31394,35	***	*****	*****
2017-09-06	3818001000	Monocrystalline wafers FROM phosphorus-doped silicon, are not processed. PROVIDED FOR FURTHER multi-stage process in the manufacturing in order to obtain suitable vehicle for the manufacture of solar cells, NOT MILITARY: NEOBRAB	***	CHINA	1062	96019,44	***	*****	*****
2017-09-07	3818001000	DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer SI D200 PP + R10-13 / T5.5-6.5 diameter 200 mm, P + type (boron doped). INTENDED FOR USE IN THE PRODUCTION OF INTEGRATED CIRCUITS. SUM	***	JAPAN	2.6	4111,39	***	*****	*****
2017-09-07	3818001000	SILICON MONOKRISTALICHESKY doped In WAFERS without departing: IES 100 0.01 (111) -2500SHT, EFC 100 3-30 (111) -907SHT, KDB 100 0.03 (111) -150SHT... OOO "PROLOGUE SEMIKOR" Ukraine there is no 0	***	UKRAINE	72.1	28038,5	***	*****	*****
2017-09-11	3818001000	High-resistivity silicon wafer. Diameter of 100 mm, thickness of 460 microns. SOURCE MATERIAL FOR MANUFACTURING CRYSTAL INTEGRATED CIRCUITS: GREAT ASCENT INTERNATIONAL LIMITED GREAT ASCENT INTERNATIONAL LIMITED 100	***	JAPAN	2.4	7170	***	*****	*****
2017-09-12	3818009000	A semiconductor wafer of gallium arsenide-SHAPED discs with a diameter of 50.8 MM is intended for use as a raw material for the manufacture of semiconductor devices ELECTRONICS by spraying and superfine ultrapure semiconductors	***	UNITED STATES	1.35	1278,38	Vilnius Lithuania	*****	*****
2017-09-18	3818001000	DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; METHOD OF GROWING: CZ; CONDUCTIVITY TYPE: N; Went	***	CHINA	14.4	2955,47	***	*****	*****
2017-09-18	3818001000	DOPED SILICON, purification, monocrystalline, plate-shaped, polished, gratuitous POSTAKVA AS SAMPLES: silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; MET	***	CHINA	18	3789,85	***	*****	*****
2017-09-20	3818001000	Silicon wafer polishing, doped monocrystalline, electronics; Packed in CARTRIDGES / PO 25 PCS / VACUUM PACKAGES paved cardboard and foam insert: 6 "(150mm) of the plate (Appendix 85), the conductivity type N, DIAM.150 +/- 0.20	***	CHINA	33.44	24076,5	***	*****	*****
2017-09-22	3818001000	DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer SI D200 P CZ100 R12 T725 WP07 is purified SILICON, monocrystalline, plate-shaped diameter 200 mm, p type (boron-doped) P	***	JAPAN	15.9	12861,65	***	*****	*****

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Our wafer import data of Russia and market research report covers market priceof wafer and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of wafer in Russia. Few shipment records with a small number of important columns from Russia import data of wafer are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of wafer. To view more shipment records of wafer import data of Russia, you can set a filter by Country Name, HS Code and Place.

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