DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | VOLTAGE REGULATOR: | VALEO | *** | 599.04 | 15084,48 | GUANGZHOU | ***** | ***** |
2017-09-01 | 8541290000 | Other transistors, phototransistors EXCEPT: TRANSISTOR, low-voltage power MOSFET, CASING - TO-263-3, QTY CHANNELS - 1 BREAKDOWN VOLTAGE CURRENT-SOURCE - - 40 V, DC CURRENT LEAKAGE / FLOW - - 100 A, RESISTANCE CURRENT-SOURCE - 3.5 mOHMS, VOLTAGE | *** | CHINA | 1.6 | 1704,5 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistors. BC807-40 TRANSISTOR VOLTAGE 5V VDC. CASING SOT-23. 0.5 A. CURRENT TEMPERATURE +150 ° C. Power dissipation 0,3 W. BC846B TRANSISTOR VOLTAGE 6V VDC. CASING SOT-23. 0.1 A. CURRENT TEMPERATURE +150 ° C. SCATTERING POWER TRANSISTOR BC856 0,2 W. | *** | CHINA | 40.2 | 4536,71 | *** | ***** | ***** |
2017-09-01 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power 100 W, the voltage source-drain 100 V, the drain current of 25 A, HULL TYPE TO-252-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | CHINA | 1.26 | 683,79 | *** | ***** | ***** |
2017-09-01 | 8541290000 | TRANSISTOR MODEL "SMP3003-TL-1E" - 32 PCS. The product is a field-effect transistor MAXIMUM power dissipation of 90 W and a maximum drain-source voltage to -75 V. THE PRODUCT IS PROVIDED AS A COMPONENT OF THE PRODUCT . : SE | *** | ISRAEL | 0.06 | 108,45 | *** | ***** | ***** |
2017-09-01 | 8541290000 | TRANSISTOR MODEL "2N2907A" - 1600 pcs. THE PRODUCT IS SILICON PNP transistor small signal. MAXIMUM power dissipation 1.8 Tues. CURRENT COLLECTOR - 0.6 A, voltage - 60V. Engineered products made in the case FOR: M SURFACE | *** | ISRAEL | 0.57 | 1940,77 | *** | ***** | ***** |
2017-09-01 | 8541290000 | MOS transistors for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on 100 BREAKDOWN VOLTAGE | *** | TAIWAN CHINA | 0.2 | 1821,32 | *** | ***** | ***** |
2017-09-01 | 8541290000 | MOS transistors for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 | *** | TAIWAN CHINA | 0 | 3,09 | *** | ***** | ***** |
2017-09-01 | 8541290000 | TRANSISTOR SEMICONDUCTOR, SILICON, ZXMP6A17G, drain-source voltage 60V, drain current 4.3a, 3.9VT POWER FOR PROM.SBORKI TV MODELS UE65KS9000UXRU ART: 0505-002790 DIODES LIMITED DIODES 9000 | *** | CHINA | 2.7 | 660,37 | *** | ***** | ***** |
2017-09-01 | 8541290000 | TRANSISTOR SEMICONDUCTOR, SILICON, FCX491A, VOLTAGE KOLLETOR-BASE 40V, collector current of 1A, 1W, TV MODELS FOR PROM.SBORKI UE50MU6100UXRU, ART: 0502-001345 DIODES LIMITED DIODES 4000 | *** | CHINA | 5.4 | 116,82 | *** | ***** | ***** |