| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-07 | 8541300009 | Thyristors TIODNYE LOW-FREQUENCY Tablet version for operation in a converter device and the power unit EXCAVATOR ESH-25/90, made on the basis semiconductor single crystals with three or more PN-Transitions: Thyristors T253-1000-14UH: TIR | *** | RUSSIA | 9 | 1196,72 | *** | ***** | ***** |
| 2017-09-07 | 8541100009 | DIODES. ARE NOT CROWBAR electrical equipment and dual-use goods: power diodes B10 10A 380V. SILICON, diffusion. FOR WORK IN CHAINS OF STATIC POWER CONVERTERS DC and AC current frequency up to 2 kHz FROM UNKNOWN | *** | RUSSIA | 0.45 | 50,58 | *** | ***** | ***** |
| 2017-09-08 | 8541300009 | THYRISTOR T273-3200-10-N-30pcs. TU3417-042-41687291- 2008. material silicon. Operating temperature <125 degrees. S., slew rate enable current <4A / ISS applied in power converter, as well as other connections: DC and PE | *** | RUSSIA | 34.95 | 6700,74 | *** | ***** | ***** |
| 2017-09-18 | 8541300009 | Thyristor modules MT3-540-14-A2-N-600SHT, MT3-540-18-A2-N-600SHT TU 3417-028-41687291-2002, MATERIAL -.. SILICON. Operating temperature <125 degrees. S., slew rate enable current <4A / ISS: Used in power converter, A | *** | RUSSIA | 1800 | 75382,13 | *** | ***** | ***** |
| 2017-09-21 | 8541100009 | SILICON DIODES, diffusion, LAVINNYE.PREDNAZNACHENY FOR WORK IN CHAINS OF STATIC POWER CONVERTERS DC and AC currents CHASTOAH to 2kHz. (DO NOT light-emitting) DIODES DL161-200-12 Rectifying diodes, pin on currents 200.25 | *** | RUSSIA | 26.5 | 2298,2 | *** | ***** | ***** |
| 2017-09-22 | 8541300009 | Thyristor modules MT3-130-28-70-FN-1pc., TU 3417-028-41687291-2002 material-silicon. Operating temperature <125 degrees. S., slew rate enable current <4A / ISS applied in power converter: And also in other circuits POST | *** | RUSSIA | 0.3 | 5,95 | *** | ***** | ***** |
| 2017-09-25 | 8541300009 | Thyristor modules MT3-540-18-A2-N-120SHT. TU 3417-028-41687291-2002. SILICON MATERIAL. Operating temperature <125 degrees. S., Maximum speed: RISE enable current <4A / ISS applied in semiconductor converters of electric power, and | *** | RUSSIA | 170.4 | 10080 | *** | ***** | ***** |
| 2017-09-27 | 8541100009 | DIODE MODULE MDD630-36N2-36SHT. TU3417-059-41687291-2012. Material silicon. Operating temperature <125 degrees. S. applied in semiconductor converters of electricity as well as in power circuits and AC VARIOUS: POWER ELEKTRICHES | *** | RUSSIA | 54 | 3065,3 | *** | ***** | ***** |
| 2017-09-27 | 8541100009 | DIODE MODULE INDUCTOTHERM IP # 818531-PE-30pcs. TU 3417-059-41687291-2012. SILICON MATERIAL. Operating temperature <125 degrees. AS USED IN SEMICONDUCTOR POWER CONVERTERS AND ELECTRICAL in power circuits: DEVICE ABM | *** | RUSSIA | 42.6 | 3984,6 | *** | ***** | ***** |
| 2017-09-29 | 8541100009 | DIODE DF233-100-26-P4-N-6 pcs., TU 3417-060-41687291-2012, D053-7100-4-N-24sht., TU3417-046-41687291-2008, SILICON MATERIAL. Operating temperature <125 degrees. AS USED IN SEMICONDUCTOR POWER CONVERTERS,: AND in power circuits EL | *** | RUSSIA | 4.4 | 1497,79 | *** | ***** | ***** |