| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-07 | 8541100009 | DIODES. ARE NOT CROWBAR electrical equipment and dual-use goods: power diodes B10 10A 380V. SILICON, diffusion. FOR WORK IN CHAINS OF STATIC POWER CONVERTERS DC and AC current frequency up to 2 kHz FROM UNKNOWN | *** | RUSSIA | 0.45 | 50,58 | *** | ***** | ***** |
| 2017-09-21 | 8541100009 | SILICON DIODES, diffusion, LAVINNYE.PREDNAZNACHENY FOR WORK IN CHAINS OF STATIC POWER CONVERTERS DC and AC currents CHASTOAH to 2kHz. (DO NOT light-emitting) DIODES DL161-200-12 Rectifying diodes, pin on currents 200.25 | *** | RUSSIA | 26.5 | 2298,2 | *** | ***** | ***** |
| 2017-09-27 | 8541100009 | DIODE MODULE MDD630-36N2-36SHT. TU3417-059-41687291-2012. Material silicon. Operating temperature <125 degrees. S. applied in semiconductor converters of electricity as well as in power circuits and AC VARIOUS: POWER ELEKTRICHES | *** | RUSSIA | 54 | 3065,3 | *** | ***** | ***** |
| 2017-09-27 | 8541100009 | DIODE MODULE INDUCTOTHERM IP # 818531-PE-30pcs. TU 3417-059-41687291-2012. SILICON MATERIAL. Operating temperature <125 degrees. AS USED IN SEMICONDUCTOR POWER CONVERTERS AND ELECTRICAL in power circuits: DEVICE ABM | *** | RUSSIA | 42.6 | 3984,6 | *** | ***** | ***** |
| 2017-09-29 | 8541100009 | DIODE DF233-100-26-P4-N-6 pcs., TU 3417-060-41687291-2012, D053-7100-4-N-24sht., TU3417-046-41687291-2008, SILICON MATERIAL. Operating temperature <125 degrees. AS USED IN SEMICONDUCTOR POWER CONVERTERS,: AND in power circuits EL | *** | RUSSIA | 4.4 | 1497,79 | *** | ***** | ***** |
| 2017-11-30 | 8541100009 | Power diodes in a sealed ceramic-metal enclosure, designed to work in DC and AC VARIOUS ELECTRIC POWER common industrial technical installations frequencies up to 500 Hz, AS WELL AS IN SEMICONDUCTOR CONVERTERS | ELECTROVIPRYAMITEL | UZBEKISTAN | 20 | 3113,28 | TASHKENT | ***** | ***** |
| 2017-11-30 | 8541100009 | DIODE D066-12500-4-N-54SHT. TU3417-052-41687291-2011. Material silicon. Operating temperature <125 degrees. AS USED IN SEMICONDUCTOR POWER CONVERTERS AND in power circuits INDUSTRIAL ELECTRICAL DEVICES | The uppercase E crossed-T | REPUBLIC OF ESTONIA | 7.4 | 4601,19 | TALLINN | ***** | ***** |
| 2017-11-30 | 8541100009 | DIODE D066-12500-4-N-6 pcs., TU3417-052-41687291-2011,-SILICON MATERIAL. Operating temperature <125 degrees. C., is applied in an energy converter, as well as other DC and AC DIFFERENT POWER ELECTRICAL INSTALLATIONS | The uppercase E crossed-T | CHINA | 0.9 | 30 | SHANGHAI | ***** | ***** |