| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-11-01 | 8541300009 | THYRISTOR SILICON diffusely, STRUCTURE PNPN, triode, unclosable, INTENDED FOR USE AS A HIGH POWER switching elements, the DC voltage 500 V, DC 150 A, NOT JOM ELECTRICAL | "BETA ELECTRONICS" | REPUBLIC OF INDIA | 3.214 | 371,32 | MOSCOW | ***** | ***** |
| 2017-11-03 | 8541210000 | Silicon Transistors, NPN epitaxial-planar Structure for use in amplifiers, pulse and switching devices, the range of operating temperature -60 ... + 125C, for industrial applications: | Fine "Azon" | REPUBLIC OF INDIA | 0.156 | 247,93 | MOSCOW | ***** | ***** |
| 2017-11-03 | 8541290000 | NPN Silicon Transistors MEZAPLANARNY STRUCTURES FOR A switching device and a power supply constant power dissipation is 50W, for industrial applications: 2T839A | Fine "Elter" | REPUBLIC OF INDIA | 0.149 | 84,59 | MOSCOW | ***** | ***** |
| 2017-11-03 | 8541100009 | 5.2 PROPERTY According to the list â„– 11430.1783: REF. FOR PERSONS. DIOD 2D231B 1 - 23 PCS. DIOD silicon rectifier is designed to work as the rectifier sinusoidal voltage. The average direct current up to 10A maximum reverse voltage 2 | ABSENT | REPUBLIC OF INDIA | 0.138 | 3966,57 | MUMBAI PORT | ***** | ***** |
| 2017-11-03 | 8541100009 | 5.2 PROPERTY According to the list â„– 11430.1789: REF. FOR PERSONS. 8 DIOD KD209V - 170 PCS. Diode Silicon diffusion in a plastic case designed to work as the rectifier sinusoidal voltage. Maximum Forward Current 6A Maximum | ABSENT | REPUBLIC OF INDIA | 0.17 | 354,67 | MUMBAI PORT | ***** | ***** |
| 2017-11-03 | 8541300009 | 5.2 PROPERTY According to the list â„– 11430.1787: REF. FOR PERSONS. 4 THYRISTOR 2T161-160-3-32 - 18 PCS. THYRISTOR SILICON triode, non-conductive in the reverse direction, pin version with flying leads on the maximum average current of 160A, REPEAT | Figurative mark PJSC "ELECTROVIPRYAMITEL" | REPUBLIC OF INDIA | 4.248 | 21300,49 | MUMBAI PORT | ***** | ***** |
| 2017-11-03 | 8541210000 | 5.2 PROPERTY According to the list â„– 11430.1787: REF. FOR PERSONS. 11 TRANSISTOR 2T201B - 16 PCS. TRANSISTOR silicon epitaxial-planar amplifying LOW FREQUENCY in metal-glass housing, power dissipation 0,15VT COLLECTOR MAXIMUM VOLT | IZOBRAITELNY SIGN of "silicon" | REPUBLIC OF INDIA | 0.016 | 225,43 | MUMBAI PORT | ***** | ***** |
| 2017-11-03 | 8541100009 | 5.2 PROPERTY According to the list â„– 11430.1784: REF. FOR PERSONS. 2 diodes D605 - 8 pcs. DIODE SILICON DOT, in the ceramic-metal body with a rigid leads, voltage up to 16V. DESIGNED FOR THE DETECTION OF PULSE amplitude-modulated oscillations | ABSENT | REPUBLIC OF INDIA | 0.032 | 110,96 | MUMBAI PORT | ***** | ***** |
| 2017-11-07 | 8541100009 | 5.2 PROPERTY According to the list â„– 11430.1769: REF. FOR PERSONS. 12, diodes 2D161-200-3 - 24 PCS. DIODE SILICON pin version with flying leads at the maximum permissible average forward current of 200A, repetitive peak reverse VOLTAGE 300-1600V, | ABSENT | REPUBLIC OF INDIA | 6.432 | 2296,3 | PORT Mumbai | ***** | ***** |
| 2017-11-07 | 8541100009 | 5.2 PROPERTY According to the list â„– 11430.1769: REF. FOR PERSONS. 16, diodes KD226A - 15 PCS. Diode Silicon diffusion in a plastic case designed to work as the rectifier sinusoidal voltage. THE MOST DIRECT CURRENT 2 A MAXIMA | ABSENT | REPUBLIC OF INDIA | 0.03 | 42,61 | PORT Mumbai | ***** | ***** |