DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-01 | 8541300009 | THYRISTOR SILICON diffusely, STRUCTURE PNPN, triode, unclosable, INTENDED FOR USE AS A HIGH POWER switching elements, the DC voltage 500 V, DC 150 A, NOT JOM ELECTRICAL | "BETA ELECTRONICS" | REPUBLIC OF INDIA | 3.214 | 371,32 | MOSCOW | ***** | ***** |
2017-11-03 | 8541300009 | 5.2 PROPERTY According to the list â„– 11430.1787: REF. FOR PERSONS. 4 THYRISTOR 2T161-160-3-32 - 18 PCS. THYRISTOR SILICON triode, non-conductive in the reverse direction, pin version with flying leads on the maximum average current of 160A, REPEAT | Figurative mark PJSC "ELECTROVIPRYAMITEL" | REPUBLIC OF INDIA | 4.248 | 21300,49 | MUMBAI PORT | ***** | ***** |
2017-11-07 | 8541300009 | 5.2 PROPERTY According to the list â„– 11430.1772: REF. FOR PERSONS. 8, thyristors 2T161-160-12-33V2 - 8 pcs. THYRISTOR SILICON triode, non-conductive in the reverse direction, pin version with flying leads on the maximum average current of 160A, IN | Figurative mark PJSC "ELECTROVIPRYAMITEL" | REPUBLIC OF INDIA | 1.888 | 9557,43 | PORT Mumbai | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR TFI393-2500-28-A2E3-N-30pcs., TU3417-049-41687291-2011. TFI253-1000-20-A2K3H4-N-110SHT. , TFI373-2000-25-A2E3-N-230SHT., TFI773-2000-25-A2E3-N-100 pieces. TU3417-045-41687291-2008. Material silicon. Operating temperature <125 degrees. FROM. | The uppercase E crossed-T | REPUBLIC OF INDIA | 622.05 | 113866,9 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR TFI253-1000-20-A2K3H4-N-110SHT. , TFI373-2000-25-A2E3-N-50pcs., TFI773-2000-25-A2E3-N-30pcs. TU3417-045-41687291-2008. Material silicon. Operating temperature <125 degrees. S. slew rate enable current <4A / ISS | The uppercase E crossed-T | REPUBLIC OF INDIA | 173.3 | 34043,3 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR TFI373-2000-25-A2E3-N-180SHT.,. TU3417-045-41687291-2008. Material silicon. Operating temperature <125 degrees. S. slew rate enable current <4A / ISS | The uppercase E crossed-T | REPUBLIC OF INDIA | 286.2 | 40343,4 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR TFI393-2500-28-A2E3-N-30pcs., TU3417-049-41687291-2011. TFI773-2000-25-A2E3-N-70SHT. TU3417-045-41687291-2008. Material silicon. Operating temperature <125 degrees. S. slew rate enable current <4A / ISS | The uppercase E crossed-T | REPUBLIC OF INDIA | 162.55 | 39480,2 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR SILICON, diffusion, structure PNPN, for use as a switching element, maximum reverse voltage up to 500V, for industrial applications: KU108ZH | Fine "BETA ELECTRONICS" | REPUBLIC OF INDIA | 0.354 | 55,54 | MOSCOW | ***** | ***** |
2017-11-27 | 8541300009 | THYRISTOR TFI393-2500-28-A2E3-N-30pcs., TU3417-049-41687291-2011. Material silicon. Operating temperature <125 degrees. S. slew rate enable current <4A / ISS | The uppercase E crossed-T | REPUBLIC OF INDIA | 81 | 16740 | MOSCOW | ***** | ***** |
2017-11-29 | 8541300009 | THYRISTOR T353-800-36-N-10pc. TU 3417-042-41687291-2008. TFI253-1000-22-A2P3-N-25 pcs., TFI253-1250-20-A2E3-N-30pcs., TFI143-630-14-A2T3-N-25 pcs., TU3417-045-41687291-2008. Material- silicon. Operating temperature <125 degrees. FROM., | The uppercase E crossed-T | REPUBLIC OF INDIA | 41.8 | 9050,6 | NEW DELHI | ***** | ***** |