Aks Import Data of Russia

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Find trade data and market research report on aks imports under HS Code 8541290000 and follow up market price of akss. Know market share of companies importing aks under HS Code 8541290000

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-09-07	8541290000	TRANSISTORS WITH POWER OVER dissipation 1W AND NOT NOT photo- and light emitting, INDUSTRIAL APPLICATIONS INCLUDING: P-channel field effect transistor with insulated gate HOUSING (TO-263), MAKS.NAPRYAZH. Drain-Source -60VDC, RAB.TOK Photo - 110A, Rab	***	CHINA	0.56	2848,79	***	*****	*****
2017-09-08	8541290000	Other transistors, phototransistors EXCEPT: MOS TRANSISTOR ROHS: respective housing: SMD PACKAGING / UNIT: SOT-23-3 Number of channels: 1 Transistor Polarity: N VDS - breakdown voltage of the drain-source 30 V ID - CONSTANT CURRENT LEAKS: A 5 RDS ON - SOPROT	***	SLOVAKIA	0.97	559,09	***	*****	*****
2017-09-08	8541290000	Other transistors EXCEPT phototransistor: MOSFET VDS - drain-source voltage: 75 V PD - Power Dissipation: 330 W Number of channels: 1 Transistor Polarity: N ID - CONSTANT CURRENT LEAKS: 140 A RDS ON - Resistance Drain-7 mOHMS VG	***	SLOVAKIA	13.4	4846,21	***	*****	*****
2017-09-08	8541290000	Other transistors, phototransistors EXCEPT: TRANSISTOR MOS TRANSISTOR POLARITY: N VDS - breakdown voltage of the drain-source 30 V ID - CONSTANT CURRENT LEAKS: MOS TRANSISTOR NUMBER OF CHANNELS: 1 Transistor Polarity: N VDS - breakdown voltage of the drain-source 4	***	SLOVAKIA	21.68	8757,64	***	*****	*****
2017-09-12	8541290000	Semiconductor devices - Module IGBT. IS A HIGH-SPEED DUAL POWER module based on insulated-gate bipolar transistor MANAGEMENT UV lamp FLEKSOPRINTERA. MAX. Switched current - 150 A MAKS.NAPRYAZHENIE 1: 20	***	ITALY	0.62	141,52	***	*****	*****
2017-09-17	8541290000	MOS TRANSISTOR N-CHANNEL. Maximum power dissipation (PD) 5 VT "MAXIMUM drain-source voltage 75 VMAKSIMALNOE gate-source voltage 20 VSOPROTIVLENIE CHANNEL The OPEN IOM 35" FAIRCHILD SEMICONDUCTOR FAIRCHILD FDP047AN08A0 200	***	CHINA	0.5	541,17	***	*****	*****
2017-09-17	8541290000	MOS TRANSISTOR N-CHANNEL. Maximum power dissipation (PD) 5 VT "MAXIMUM drain-source voltage U SI V100MAKSIMALNOE gate-source voltage U MAX GI., V20SOPROTIVLENIE CHANNEL The OPEN ON SI R., MOM35" FAIRCHILD SEMICONDUCTOR F	***	CHINA	1	1788	***	*****	*****
2017-09-20	8541290000	Other transistors, phototransistors EXCEPT: MOS TRANSISTOR ROHS: corresponding view INSTALLATION: MOS TRANSISTOR NUMBER CHANNEL 1 CHANNEL TRANSISTOR POLARITY: N-CHANNEL VDS - breakdown voltage of the drain-source: 150 V ID - CONSTANT CURRENT LEAKS: 78 A RDS ON	***	JAPAN	12.87	3670,58	***	*****	*****
2017-09-20	8541290000	Other transistors EXCEPT phototransistor: MOSFET Transistor Polarity: N-CHANNEL VDS - breakdown voltage of the drain-source: 250 V ID - CONSTANT CURRENT LEAKS: 57 A RDS ON - resistance of the drain-source 33 MOHMS VGS - gate-source voltage: 30 V PD -	***	JAPAN	0.3	389,65	***	*****	*****
2017-09-20	8541290000	Other transistors EXCEPT phototransistor: MOS TRANSISTOR TYPE ASSEMBLY: SMD / SMT PACKAGING / UNIT: SO-8 NUMBER OF CHANNELS 2 POLARITY TRANSISTOR: N VDS - breakdown voltage of the drain-source 30 V PD - power dissipation: 2 W ID - CONTINUOUS CURRENT LEAKS: 4.9	***	JAPAN	11.5	3415,01	***	*****	*****

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