DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 8541100009 | Semi-conductor, for use in the installation of electrical circuits, yavl. CROWBAR EL / EQUIPMENT - Rectifying diodes in a ceramic housing, TYPE SEMICONDUCTOR - single-element rectifying the PIN, VOLTAGE 50V, 0.2A MAKS.TOK, RAB.TEMP. - 135 | *** | CHINA | 0.31 | 14,67 | *** | ***** | ***** |
2017-09-05 | 8541401000 | Light emitting diodes (COMPONENT electrical equipment non-domestic) MAKS.PRYAMOE VOLTAGE. 2.5, MAKS.PRYAMOY 30 mA, the color of light: red, green, yellow, blue, orange for PRIM. IN DIFFERENT opto-electronic equipment, 3 cards. Boxes. CO SPETS.MARK. + DIODES | *** | CHINA | 25.2 | 6882,54 | *** | ***** | ***** |
2017-09-05 | 8541401000 | Light-emitting diodes FOR MONITORING STATION PH SAFE SENS TRAKSTATION unit conversion TRAKPOD PRESENTS highly specialized devices with two objectives: 1. The EMIT SENSOR SIGNAL LIGHT SV2 initializes two wavelengths - 600 nm, and 568 NM (LE | *** | CHINA | 1.07 | 1824,01 | *** | ***** | ***** |
2017-09-07 | 8541100009 | DIODES: FLAT Small signal semiconductor diodes "LL4148-GS08" On the maximal periodic reverse voltage 100V and periodic peaks direct current to 500 mA. TYPE SEMICONDUCTOR - SILICON. | VISHAY | *** | 57.2 | 3579,6 | ST PETERSBURG | ***** | ***** |
2017-09-07 | 8541100009 | DIODES: FLAT Small signal semiconductor diodes "LL4148-GS08" On the maximal periodic reverse voltage 100V and periodic peaks direct current to 500 mA. TYPE SEMICONDUCTOR - SILICON. : Small signal semiconductor diodes HELD | *** | CHINA | 57.2 | 3579,6 | *** | ***** | ***** |
2017-09-07 | 8541409000 | Photosensitive semiconductor devices INDUSTRIAL APPLICATIONS, INCLUDING: PCP with transistor output HOUSING SOP-4, gain of the CURRENT 50-300% MAKS.NAPRYAZH. Collector-emitter voltage 70VDC, MAKS.TOK COLLECTOR low as 0.05 A., MAKS.VH.TOK 0.05 | *** | CHINA | 4 | 627,23 | *** | ***** | ***** |
2017-09-07 | 8541290000 | TRANSISTORS WITH POWER OVER dissipation 1W AND NOT NOT photo- and light emitting, INDUSTRIAL APPLICATIONS INCLUDING: P-channel field effect transistor with insulated gate HOUSING (TO-263), MAKS.NAPRYAZH. Drain-Source -60VDC, RAB.TOK Photo - 110A, Rab | *** | CHINA | 0.56 | 2848,79 | *** | ***** | ***** |
2017-09-08 | 8541290000 | Other transistors, phototransistors EXCEPT: MOS TRANSISTOR ROHS: respective housing: SMD PACKAGING / UNIT: SOT-23-3 Number of channels: 1 Transistor Polarity: N VDS - breakdown voltage of the drain-source 30 V ID - CONSTANT CURRENT LEAKS: A 5 RDS ON - SOPROT | *** | SLOVAKIA | 0.97 | 559,09 | *** | ***** | ***** |
2017-09-08 | 8541290000 | Other transistors EXCEPT phototransistor: MOSFET VDS - drain-source voltage: 75 V PD - Power Dissipation: 330 W Number of channels: 1 Transistor Polarity: N ID - CONSTANT CURRENT LEAKS: 140 A RDS ON - Resistance Drain-7 mOHMS VG | *** | SLOVAKIA | 13.4 | 4846,21 | *** | ***** | ***** |
2017-09-08 | 8541290000 | Other transistors, phototransistors EXCEPT: TRANSISTOR MOS TRANSISTOR POLARITY: N VDS - breakdown voltage of the drain-source 30 V ID - CONSTANT CURRENT LEAKS: MOS TRANSISTOR NUMBER OF CHANNELS: 1 Transistor Polarity: N VDS - breakdown voltage of the drain-source 4 | *** | SLOVAKIA | 21.68 | 8757,64 | *** | ***** | ***** |