DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-07 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 2.85 | 76,34 | *** | ***** | ***** |
2017-09-07 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 2 | 52,59 | *** | ***** | ***** |
2017-09-11 | 8542339000 | MONOLITHIC INTEGRATED MICROCHIP / INEXPENSIVE operational amplifier input stage JFET transistor SERIES ADTL084; APPLY UNIVERSAL amplifying circuit, for monitoring and controlling supply, active filter in the control ADTL084ARZ; H | *** | TAIWAN CHINA | 0.01 | 41 | *** | ***** | ***** |
2017-09-11 | 8542339000 | MONOLITHIC INTEGRATED MICROCHIP / CHANNEL WITH OPERATIONAL AMPLIFIER OUTPUT TO BUS POWER span and bandwidth 4MHz SERIES AD8666; APPLY sensor for amplifying a signal in the buffer voltage reference, medical AD8666 | *** | TAIWAN CHINA | 0.02 | 239,74 | *** | ***** | ***** |
2017-09-11 | 8542399010 | MONOLITHIC INTEGRATED MICROCHIP / DIFFRENETSIALNY AMPLIFIER HIGH C SERIES low power ADA4930-2; APPLY ADC driver, in the converter an unbalanced signal into a differential, in the amplifying unit ADA4930-2Y | *** | TAIWAN CHINA | 0.01 | 1478,53 | *** | ***** | ***** |
2017-09-14 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 0.06 | 3,6 | *** | ***** | ***** |
2017-09-14 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 2.2 | 59,03 | *** | ***** | ***** |
2017-09-14 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 1 | 25,9 | *** | ***** | ***** |
2017-09-19 | 8541290000 | A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 170W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220 FET power dissipation | *** | TAIWAN CHINA | 3 | 458,72 | *** | ***** | ***** |
2017-09-19 | 8541290000 | FET power dissipation of 40W, to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, in the housing TO220, ART. 2SK3568 - 300SHT. : TOSHIBA TOSHIBA 0 | *** | TAIWAN CHINA | 0.5 | 92,63 | *** | ***** | ***** |