DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-02 | 8541210000 | Transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 0.83VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistor power dissipation | *** | SINGAPORE | 2 | 277,28 | *** | ***** | ***** |
2017-09-07 | 8541210000 | TRANSISTORS unpackaged silicon epitaxial-planar FIELD WITH CHANNEL P-TYPE amplifying, with the diffusion of gates, maximum power dissipation NO MORE THAN 0.08 BT for use in hybrid integrated circuits 2P303E 2P3 | *** | UZBEKISTAN | 0.15 | 30 | *** | ***** | ***** |
2017-09-11 | 8541210000 | Bipolar transistor power dissipation of 0.7 W, a phototransistor, NOT SCRAP ELECTRIC, intended to amplify signals to the RADIO ELECTRONIC PRODUCTS bipolar transistor power dissipation 0.7 W "TYT ELECTRONICS CO., LTD" "B | *** | CHINA | 1.35 | 106,5 | *** | ***** | ***** |
2017-09-11 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.25W to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors MOSCHNOS | *** | CHINA | 1 | 127,99 | *** | ***** | ***** |
2017-09-11 | 8541210000 | Transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE Bipolar Transistor Power Dissipation 0.5W to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased TO92 FET power dissipation | *** | CHINA | 2 | 240,56 | *** | ***** | ***** |
2017-09-11 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.3VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors power | *** | CHINA | 2 | 284,19 | *** | ***** | ***** |
2017-09-18 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.83VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased TO92 bipolar transistors power | *** | MALAYSIA | 2 | 247,64 | *** | ***** | ***** |
2017-09-23 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.35VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors MOSCHNOS | *** | PHILIPPINES | 3 | 327,8 | *** | ***** | ***** |
2017-09-23 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.31VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 NEXPERIA BV NEXPERIA BV BC8 | *** | PHILIPPINES | 1 | 133,71 | *** | ***** | ***** |
2017-09-23 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.31VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors MOSCHNOS | *** | PHILIPPINES | 3 | 348,65 | *** | ***** | ***** |