| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-02 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | CHINA | 0.68 | 17,94 | *** | ***** | ***** |
| 2017-09-02 | 8541210000 | Transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 0.83VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistor power dissipation | *** | SINGAPORE | 2 | 277,28 | *** | ***** | ***** |
| 2017-09-02 | 8541290000 | A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 280W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO247 FET power dissipation | *** | SINGAPORE | 14 | 1585,24 | *** | ***** | ***** |
| 2017-09-02 | 8541290000 | Transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 200W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO247 FET power dissipation | *** | SINGAPORE | 27 | 3274,81 | *** | ***** | ***** |
| 2017-09-02 | 8541290000 | A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 195VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220 FET power dissipation | *** | SINGAPORE | 50 | 5856,42 | *** | ***** | ***** |
| 2017-09-02 | 8541290000 | Transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 90W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220 bipolar transistor power dissipation | *** | SINGAPORE | 8 | 973,71 | *** | ***** | ***** |
| 2017-09-07 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 2.85 | 76,34 | *** | ***** | ***** |
| 2017-09-07 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 2 | 52,59 | *** | ***** | ***** |
| 2017-09-07 | 8541290000 | Transistors, radio-electronic components of a semiconductor material is used for amplifying, oscillating, switching and converting electrical signals. TRANSISTORS APPLY amplifier circuits, signal generators, N- TYPE ASSEMBLY OF TWO | *** | CHINA | 0.02 | 0,83 | *** | ***** | ***** |
| 2017-09-07 | 8541210000 | TRANSISTORS unpackaged silicon epitaxial-planar FIELD WITH CHANNEL P-TYPE amplifying, with the diffusion of gates, maximum power dissipation NO MORE THAN 0.08 BT for use in hybrid integrated circuits 2P303E 2P3 | *** | UZBEKISTAN | 0.15 | 30 | *** | ***** | ***** |