Arsenide Import Data of Russia

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Find trade data and market research report on arsenide imports under HS Code 38 and follow up market price of arsenides. Know market share of companies importing arsenide under HS Code 38

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DATE HS_CODE Product Description TrademarkCountry Net Weight Statistical Cost Place Shipper NameConsignee Name
2017-09-013818009000SINGLE CRYSTAL PLATE high resistivity gallium arsenide compensate CHROME (GAAS: CR), NOT polished 4-inch diameter (102 +/- 0.5 mm), the thickness of 800 +/- 20 microns, is intended for manufacturing detectors (sensors) REGISTRATION:: :::: ***RUSSIA1.52385,26*************
2017-09-043818009000Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. Heteroepitaxial substrate on***TAIWAN CHINA9135200*************
2017-09-053818009000Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm MADE gallium arsenide (GAAS), on whose surface Apply epitaxial heterostructures FROM thin layers of gallium arsenide (GAAS) and aluminum arsenide gallium (: AL***TAIWAN CHINA0.6831394,35*************
2017-09-123818009000A semiconductor wafer of gallium arsenide-SHAPED discs with a diameter of 50.8 MM is intended for use as a raw material for the manufacture of semiconductor devices ELECTRONICS by spraying and superfine ultrapure semiconductors***UNITED STATES1.351278,38Vilnius Lithuania**********
2017-09-223818009000EPITAXIAL plate consisting of a substrate GAAS (gallium arsenide), doped silicon (SI) (less than 0.003%) C applied layers ALGAINP, doped SI (silicon) and MG (magnesium) FOR USE IN ELECTRONICS MANUFACTURING IN EPITAXIAL PLATE (D***TAIWAN CHINA17.0986690,92*************
2017-09-233818009000OTHER Chemical elements doped (indium arsenide), intended for use in electronics in the form of discs with a diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box,: idea***CHINA57500*************
2017-11-073818009000CHEMICAL COMPOUNDS Alloy: a semiconductor substrate of gallium arsenide, ligated silicon, the conductivity type N, the circular plate 2 inch diameter (50.8 mm), thickness 350 microns, INTENDED FOR USE IN MICROELECTRONICSWITHOUT A TRADEMARK***0.2725145ST PETERSBURG**********
2017-11-203818009000Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device.ABSENTTAIWAN CHINA0.939600MOSCOW**********
2017-11-223818009000Chemical elements doped - indium arsenide for use in electronics, in the form of discs DIAMETER 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box, THENABSENTCHINA0.124500MOSCOW**********


Our arsenide import data of Russia and market research report covers market priceof arsenide and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of arsenide in Russia. Few shipment records with a small number of important columns from Russia import data of arsenide are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of arsenide. To view more shipment records of arsenide import data of Russia, you can set a filter by Country Name, HS Code and Place.

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