DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 3818009000 | SINGLE CRYSTAL PLATE high resistivity gallium arsenide compensate CHROME (GAAS: CR), NOT polished 4-inch diameter (102 +/- 0.5 mm), the thickness of 800 +/- 20 microns, is intended for manufacturing detectors (sensors) REGISTRATION:: :::: | *** | RUSSIA | 1.5 | 2385,26 | *** | ***** | ***** |
2017-09-04 | 3818009000 | Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. Heteroepitaxial substrate on | *** | TAIWAN CHINA | 9 | 135200 | *** | ***** | ***** |
2017-09-05 | 3818009000 | Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm MADE gallium arsenide (GAAS), on whose surface Apply epitaxial heterostructures FROM thin layers of gallium arsenide (GAAS) and aluminum arsenide gallium (: AL | *** | TAIWAN CHINA | 0.68 | 31394,35 | *** | ***** | ***** |
2017-09-12 | 3818009000 | A semiconductor wafer of gallium arsenide-SHAPED discs with a diameter of 50.8 MM is intended for use as a raw material for the manufacture of semiconductor devices ELECTRONICS by spraying and superfine ultrapure semiconductors | *** | UNITED STATES | 1.35 | 1278,38 | Vilnius Lithuania | ***** | ***** |
2017-09-22 | 3818009000 | EPITAXIAL plate consisting of a substrate GAAS (gallium arsenide), doped silicon (SI) (less than 0.003%) C applied layers ALGAINP, doped SI (silicon) and MG (magnesium) FOR USE IN ELECTRONICS MANUFACTURING IN EPITAXIAL PLATE (D | *** | TAIWAN CHINA | 17.09 | 86690,92 | *** | ***** | ***** |
2017-09-23 | 3818009000 | OTHER Chemical elements doped (indium arsenide), intended for use in electronics in the form of discs with a diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box,: idea | *** | CHINA | 5 | 7500 | *** | ***** | ***** |
2017-11-07 | 3818009000 | CHEMICAL COMPOUNDS Alloy: a semiconductor substrate of gallium arsenide, ligated silicon, the conductivity type N, the circular plate 2 inch diameter (50.8 mm), thickness 350 microns, INTENDED FOR USE IN MICROELECTRONICS | WITHOUT A TRADEMARK | *** | 0.272 | 5145 | ST PETERSBURG | ***** | ***** |
2017-11-20 | 3818009000 | Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. | ABSENT | TAIWAN CHINA | 0.9 | 39600 | MOSCOW | ***** | ***** |
2017-11-22 | 3818009000 | Chemical elements doped - indium arsenide for use in electronics, in the form of discs DIAMETER 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box, THEN | ABSENT | CHINA | 0.12 | 4500 | MOSCOW | ***** | ***** |