DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 3818009000 | Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. Heteroepitaxial substrate on | *** | TAIWAN CHINA | 9 | 135200 | *** | ***** | ***** |
2017-09-05 | 3818009000 | Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm MADE gallium arsenide (GAAS), on whose surface Apply epitaxial heterostructures FROM thin layers of gallium arsenide (GAAS) and aluminum arsenide gallium (: AL | *** | TAIWAN CHINA | 0.68 | 31394,35 | *** | ***** | ***** |
2017-09-07 | 3818009000 | INP SUBSTRATE disc-shaped, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY INP SUBSTRATE | *** | CHINA | 0.51 | 4453,74 | *** | ***** | ***** |
2017-09-11 | 3815110000 | CATALYST TOPS secondary reformer BRANDS RKS-10 - 1900 AL: The supported catalyst containing as active component NICKEL: secondary reformer BRANDS RKS-10. Be made in the form of cylinders 34H25 C 1 MM DIAMETER axial bore 15 | *** | DENMARK | 1980 | 74453,18 | *** | ***** | ***** |
2017-09-11 | 3818009000 | CHEMICAL COMPOUNDS DOPED: semiconductor epitaxial layer structure of gallium nitride semi-insulating substrate silicon carbide circular plate with a diameter of 3 inches. It used to build electronic equipment, FOR: FOLLOW | *** | JAPAN | 1.8 | 14024,16 | *** | ***** | ***** |
2017-09-22 | 3818009000 | EPITAXIAL plate consisting of a substrate GAAS (gallium arsenide), doped silicon (SI) (less than 0.003%) C applied layers ALGAINP, doped SI (silicon) and MG (magnesium) FOR USE IN ELECTRONICS MANUFACTURING IN EPITAXIAL PLATE (D | *** | TAIWAN CHINA | 17.09 | 86690,92 | *** | ***** | ***** |
2017-09-26 | 3818009000 | The semiconductor wafer (substrate) for the manufacture of heteroepitaxial structures. SHAPED disk diameter (50.0-100.0 +/- 0.3 mm) and 0.35-0.45 +/- 0.015-0.025 THICKNESS MM) doping chemicals. INTENDED TO BASE rogue | *** | JAPAN | 15.4 | 29750 | *** | ***** | ***** |
2017-11-07 | 3818009000 | Epitaxial structures alloyed, in the form of discs, for the manufacture of solar cells, the goods can be opened in the premises under sterile conditions class 8 and above: | ABSENT | GERMANY | 117.192 | 785461,67 | KRASNODAR | ***** | ***** |
2017-11-08 | 3818009000 | CHEMICAL COMPOUNDS doped for use in electronics - epitaxial wafers: 2-inch GREEN INGAN, WAVELENGTH 525 + 4 nm, thickness = 100 +/- 10 microns, the luminescence intensity> 280 MCD - 2 PCS. Epitaxial CM. complete | ABSENT | CHINA | 0.16 | 1162,07 | Maanshan | ***** | ***** |
2017-11-10 | 3818009000 | Compounds are chemically doped for use in electronics - epitaxial wafers 4-inch red-orange ALGAINP WITH ITO LAYER wavelength 620-630 NM, luminous intensity> 350 MKD, the forward voltage <2,2V CM. AD DITIONAL | ABSENT | TAIWAN CHINA | 0.764 | 5992,24 | Hsinchu | ***** | ***** |