Axial Import Data of Russia

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-09-04	3818009000	Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. Heteroepitaxial substrate on	***	TAIWAN CHINA	9	135200	***	*****	*****
2017-09-05	3818009000	Wafer in the form of discs 100 mm in diameter, thickness of up to 0.7mm MADE gallium arsenide (GAAS), on whose surface Apply epitaxial heterostructures FROM thin layers of gallium arsenide (GAAS) and aluminum arsenide gallium (: AL	***	TAIWAN CHINA	0.68	31394,35	***	*****	*****
2017-09-07	3818009000	INP SUBSTRATE disc-shaped, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY INP SUBSTRATE	***	CHINA	0.51	4453,74	***	*****	*****
2017-09-11	3818009000	CHEMICAL COMPOUNDS DOPED: semiconductor epitaxial layer structure of gallium nitride semi-insulating substrate silicon carbide circular plate with a diameter of 3 inches. It used to build electronic equipment, FOR: FOLLOW	***	JAPAN	1.8	14024,16	***	*****	*****
2017-09-22	3818009000	EPITAXIAL plate consisting of a substrate GAAS (gallium arsenide), doped silicon (SI) (less than 0.003%) C applied layers ALGAINP, doped SI (silicon) and MG (magnesium) FOR USE IN ELECTRONICS MANUFACTURING IN EPITAXIAL PLATE (D	***	TAIWAN CHINA	17.09	86690,92	***	*****	*****
2017-09-26	3818009000	The semiconductor wafer (substrate) for the manufacture of heteroepitaxial structures. SHAPED disk diameter (50.0-100.0 +/- 0.3 mm) and 0.35-0.45 +/- 0.015-0.025 THICKNESS MM) doping chemicals. INTENDED TO BASE rogue	***	JAPAN	15.4	29750	***	*****	*****
2017-11-07	3818009000	Epitaxial structures alloyed, in the form of discs, for the manufacture of solar cells, the goods can be opened in the premises under sterile conditions class 8 and above:	ABSENT	GERMANY	117.192	785461,67	KRASNODAR	*****	*****
2017-11-08	3818009000	CHEMICAL COMPOUNDS doped for use in electronics - epitaxial wafers: 2-inch GREEN INGAN, WAVELENGTH 525 + 4 nm, thickness = 100 +/- 10 microns, the luminescence intensity> 280 MCD - 2 PCS. Epitaxial CM. complete	ABSENT	CHINA	0.16	1162,07	Maanshan	*****	*****
2017-11-10	3818009000	Compounds are chemically doped for use in electronics - epitaxial wafers 4-inch red-orange ALGAINP WITH ITO LAYER wavelength 620-630 NM, luminous intensity> 350 MKD, the forward voltage <2,2V CM. AD DITIONAL	ABSENT	TAIWAN CHINA	0.764	5992,24	Hsinchu	*****	*****
2017-11-12	3818009000	The substrate in the form of a disk, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY /	AXT	CHINA	19.273	24236,62	FREMONT	*****	*****

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