DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-06 | 8541100009 | PROTECTION DIODE (suppressor) BIDIRECTIONAL intended for use in telecommunication equipment, for outcoupling ASSEMBLY AXIAL VOLTAGE PROTECTIVE RESPONSE 24, IPMULSNY MAXIMUM CURRENT to 131 A, the operating temperature -55 +175 ° C, K | *** | CHINA | 0.4 | 330,93 | *** | ***** | ***** |
2017-09-06 | 8541100009 | PROTECTION DIODE (suppressor) BIDIRECTIONAL intended for use in telecommunication equipment, for outcoupling ASSEMBLY AXIAL VOLTAGE PROTECTIVE RESPONSE 36, IPMULSNY MAXIMUM CURRENT to 131 A, the operating temperature -55 +175 ° C, K | *** | CHINA | 0.2 | 165,46 | *** | ***** | ***** |
2017-09-07 | 8541210000 | TRANSISTORS unpackaged silicon epitaxial-planar FIELD WITH CHANNEL P-TYPE amplifying, with the diffusion of gates, maximum power dissipation NO MORE THAN 0.08 BT for use in hybrid integrated circuits 2P303E 2P3 | *** | UZBEKISTAN | 0.15 | 30 | *** | ***** | ***** |
2017-09-07 | 8541401000 | LIGHT-EMITTING DIODES: amber LED INDICATOR FOR AXIAL ILLUMINATION DEVICES, 230V LED BLUE COLOR ILLUMINATION FOR AXIAL switches, sockets FLAT PANEL FRONT, 230V, 085MA "COEL SRL" BTICINO H4743 / 230B 230 "COEL | *** | ITALY | 1.02 | 350,68 | *** | ***** | ***** |
2017-09-07 | 8541210000 | Transistors SEMICONDUCTOR NOT SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, for the industrial assembly TECHNOLOGY "SAMSUNG" TRANSISTOR silicon epitaxial, planar, KSR1101, collector-base voltage 50V, | *** | CHINA | 0.89 | 468,88 | *** | ***** | ***** |
2017-09-13 | 8541100009 | DIODES, not photodiodes, light emitting diodes NOT USED IN THE MANUFACTURE household electronic equipment, ARE NOT CROWBAR ELECTRICAL: Rectifying diodes, axial, SILICON, FAST, CASING (P600), a forward current of 20 A, REVERSE VOLTAGE | *** | CHINA | 0.02 | 3,6 | *** | ***** | ***** |
2017-09-14 | 8541210000 | Bipolar transistors NPN TRANSISTOR (EPITAXIAL). The maximum voltage of 65 V. The maximum power dissipation of 500 mW. MAX 100 mA. DIMENSIONS 4.58 X 3.86 X 4.58MM. Used for electrical P-channel MOS transistors. MAXIMUM NAP | *** | UNITED KINGDOM | 0.02 | 8,34 | *** | ***** | ***** |
2017-09-14 | 8541210000 | Bipolar transistors NPN transistors. The maximum voltage of 45 V. The maximum power dissipation of 500 mW. MAX 100 mA. DIMENSIONS 5.1 X 4.1 X 4.7MM. Used in electrical NPN BIPOLAR TRANSISTOR (EPITAXIAL). MAXIMUM VOLTAGE | *** | UNITED KINGDOM | 0.1 | 11,82 | *** | ***** | ***** |
2017-09-17 | 8541210000 | Transistor power dissipation 60-200 MILES W. For RADIOELEKTR.OBORUDOV.SODERZH.DRAGMETALLY less than 2% WITHOUT EXTRACTION FEATURES The assortment not JOM, silicon epitaxial LABELING FIELD-planar with the channel n-type diffusion shutter MET | *** | UZBEKISTAN | 0.65 | 1008 | *** | ***** | ***** |
2017-09-24 | 8541210000 | Transistors silicon epitaxial, planar, KSR1101, collector-base voltage 50V, collector current 100MA, the power of 200 mW, TV MODELS FOR PROM.SBORKI UE55D8000YSXRU SEMICONDUCTOR TRANSISTOR, 150MVT, p-type semiconductors, for PROMSBO | *** | CHINA | 50.99 | 7272,27 | *** | ***** | ***** |