DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-07 | 8541210000 | TRANSISTORS unpackaged silicon epitaxial-planar FIELD WITH CHANNEL P-TYPE amplifying, with the diffusion of gates, maximum power dissipation NO MORE THAN 0.08 BT for use in hybrid integrated circuits 2P303E 2P3 | *** | UZBEKISTAN | 0.15 | 30 | *** | ***** | ***** |
2017-09-07 | 8541210000 | Transistors SEMICONDUCTOR NOT SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, for the industrial assembly TECHNOLOGY "SAMSUNG" TRANSISTOR silicon epitaxial, planar, KSR1101, collector-base voltage 50V, | *** | CHINA | 0.89 | 468,88 | *** | ***** | ***** |
2017-09-14 | 8541210000 | Bipolar transistors NPN TRANSISTOR (EPITAXIAL). The maximum voltage of 65 V. The maximum power dissipation of 500 mW. MAX 100 mA. DIMENSIONS 4.58 X 3.86 X 4.58MM. Used for electrical P-channel MOS transistors. MAXIMUM NAP | *** | UNITED KINGDOM | 0.02 | 8,34 | *** | ***** | ***** |
2017-09-14 | 8541210000 | Bipolar transistors NPN transistors. The maximum voltage of 45 V. The maximum power dissipation of 500 mW. MAX 100 mA. DIMENSIONS 5.1 X 4.1 X 4.7MM. Used in electrical NPN BIPOLAR TRANSISTOR (EPITAXIAL). MAXIMUM VOLTAGE | *** | UNITED KINGDOM | 0.1 | 11,82 | *** | ***** | ***** |
2017-09-17 | 8541210000 | Transistor power dissipation 60-200 MILES W. For RADIOELEKTR.OBORUDOV.SODERZH.DRAGMETALLY less than 2% WITHOUT EXTRACTION FEATURES The assortment not JOM, silicon epitaxial LABELING FIELD-planar with the channel n-type diffusion shutter MET | *** | UZBEKISTAN | 0.65 | 1008 | *** | ***** | ***** |
2017-09-24 | 8541210000 | Transistors silicon epitaxial, planar, KSR1101, collector-base voltage 50V, collector current 100MA, the power of 200 mW, TV MODELS FOR PROM.SBORKI UE55D8000YSXRU SEMICONDUCTOR TRANSISTOR, 150MVT, p-type semiconductors, for PROMSBO | *** | CHINA | 50.99 | 7272,27 | *** | ***** | ***** |
2017-11-13 | 8541210000 | TRANSISTORS unpackaged silicon epitaxial-planar FIELD WITH CHANNEL P-TYPE amplifying, with the diffusion of gates, maximum power dissipation NO MORE THAN 0.08 BT for use in hybrid integrated circuits | "FOTON" | UZBEKISTAN | 0.19 | 100 | MOSCOW | ***** | ***** |