| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541210000 | Semiconductors: transistors TYPE SEMICONDUCTOR - SILICON, ARE NOT phototransistors, power dissipation 0.3W: CALIFORNIA EASTERN LABORATORIES CEL CEL NE68519-T1-A otsutviem 3 | *** | CHINA | 0.01 | 3,87 | *** | ***** | ***** |
| 2017-09-01 | 8541401000 | Light emitting diodes, indicator LEDs for WORK electronic devices. THIS LEDs used in alarm actuating devices autonomously for display. INTENSITY DURING CURRENT 10 MA at least 1000 microns. LENS 5 mm. : P COLOR | *** | CHINA | 0.3 | 182,91 | *** | ***** | ***** |
| 2017-09-01 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 50 W STMICROELECTRONICS WITHOUT TRADEMARK STMICROELECTRONICS STL11N3LLH6 B / N 2 | *** | CHINA | 0 | 2,3 | *** | ***** | ***** |
| 2017-09-01 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET, the power dissipation 27.7 BT: bipolar transistor power dissipation 15W STMICROELECTRONICS WITHOUT TRADEMARK STMICROELECTRONICS STD2805T4 B / H 2 VISHA | *** | CHINA | 0.01 | 3,63 | *** | ***** | ***** |
| 2017-09-01 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 830 BT IXYS CORPORATION WITHOUT TRADEMARK IXYS IXTH130N20T B / 3 H | *** | CHINA | 0.01 | 12,72 | *** | ***** | ***** |
| 2017-09-04 | 8541409000 | Photosensitive semiconductor devices, the assembled MODULES OPTRON- / DATA / DATA A range of 1 MBPS, VF - forward voltage of 1,7 V, IF - a forward current of 25 MA CALIFORNIA EASTERN LABORATORIES CEL PS8101-F3-AXCT-ND 100 | *** | CHINA | 0.2 | 151,6 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of the bipolar transistor BT 136, BT power dissipation 4.46 MOSFET power dissipation 2.5W bipolar transistor POWER | *** | CHINA | 0.58 | 315,14 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 27 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK INFINEON BSZ0506NSATMA1 B / 19 H | *** | CHINA | 0.02 | 9,98 | *** | ***** | ***** |
| 2017-09-05 | 8541409000 | SEMICONDUCTOR DEVICES Photosensitive. (NO ELECTRICAL SCRAP) transistor output photocoupler (optocoupler) CALIFORNIA EASTERN LABS WITHOUT TRADEMARK CEL PS2561DL-1Y-F3-A B / 10 H | *** | CHINA | 0.01 | 3,1 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, power dissipation of 140 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK INFINEON AUIRFR1010Z B / 10 H | *** | CHINA | 0.02 | 11,69 | *** | ***** | ***** |