DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 50 W STMICROELECTRONICS WITHOUT TRADEMARK STMICROELECTRONICS STL11N3LLH6 B / N 2 | *** | CHINA | 0 | 2,3 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET, the power dissipation 27.7 BT: bipolar transistor power dissipation 15W STMICROELECTRONICS WITHOUT TRADEMARK STMICROELECTRONICS STD2805T4 B / H 2 VISHA | *** | CHINA | 0.01 | 3,63 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 830 BT IXYS CORPORATION WITHOUT TRADEMARK IXYS IXTH130N20T B / 3 H | *** | CHINA | 0.01 | 12,72 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of the bipolar transistor BT 136, BT power dissipation 4.46 MOSFET power dissipation 2.5W bipolar transistor POWER | *** | CHINA | 0.58 | 315,14 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 27 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK INFINEON BSZ0506NSATMA1 B / 19 H | *** | CHINA | 0.02 | 9,98 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, power dissipation of 140 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK INFINEON AUIRFR1010Z B / 10 H | *** | CHINA | 0.02 | 11,69 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 1 W MICROCHIP TECHNOLOGY WITHOUT TRADEMARK MICROCHIP VP0808L-G B / H 5 | *** | CHINA | 0.01 | 7,12 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 170 W TOSHIBA WITHOUT TRADEMARK TOSHIBA TPHR8504PL, L1Q B / H 5 | *** | CHINA | 0.02 | 10,04 | *** | ***** | ***** |
2017-09-06 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 200W ON SEMICONDUCTOR WITHOUT TRADEMARK ON SEMICONDUCTOR NDPL180N10BG B / 10 H | *** | ISRAEL | 0.04 | 18,06 | *** | ***** | ***** |
2017-09-06 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) bipolar transistors, power dissipation 1 W ON SEMICONDUCTOR / FAIRCHILD WITHOUT TRADEMARK ON SEMICONDUCTOR PZT3904 B / 20 H | *** | ISRAEL | 0.01 | 4,36 | *** | ***** | ***** |