| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power 100 W, the voltage source-drain 100 V, the drain current of 25 A, HULL TYPE TO-252-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | CHINA | 1.26 | 683,79 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Power MOSFET "STD12NF06LT4" Series, STRIP FETT With 30W power dissipation, drain-source voltage 60V, gate-source voltage 16V, continuous leakage current of 12A intended for use in the device switching. TYPE SEMICONDUCTOR: MOS | *** | CHINA | 1.28 | 754,38 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation of 240 W, the voltage source-drain 600, drain current 30.8 A, Body type 4-DFN-EP, CLASSIFICATION CODE 3417831 is for use in switching power supply, CONVERT | *** | COSTA RICA | 0 | 50,56 | *** | ***** | ***** |
| 2017-09-07 | 8541290000 | Transistors, radio-electronic components of a semiconductor material is used for amplifying, oscillating, switching and converting electrical signals. TRANSISTORS APPLY amplifier circuits, signal generators, N- TYPE ASSEMBLY OF TWO | *** | CHINA | 0.02 | 0,83 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation, 3.1 Tu, the voltage source-drain 60, the drain current of 100 A, HULL TYPE 8VSON, CLASSIFICATION CODE 3417831 is for use in switching power supply, transformation | *** | CHINA | 0.01 | 33,56 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET P-CHANNEL, power dissipation 65W VOLTAGE source-drain 60, the drain current of 15.5 A, TYPE BODY TO-252-3, CLASSIFICATION CODE 3417831 is for use in switching power supply, CONVERTING | *** | THAILAND | 0.92 | 92,69 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation of 36 W, the voltage source-drain 60, drain current 46 A HULL TYPE TDSON-8 CLASSIFICATION CODE 3417831 is for use in switching power supply, transformation | *** | THAILAND | 0.02 | 52,34 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power of 1 W, the voltage source-drain 30, the drain current of 30 A, HULL TYPE 8QFN, CLASSIFICATION CODE 3417831 is for use in switching power supply, CONVERTER | *** | THAILAND | 1.02 | 2439,27 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation 136 VT, the voltage source-drain 250, the drain current of 25 A, HULL TYPE TO-263-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | GERMANY | 0.17 | 141,26 | *** | ***** | ***** |
| 2017-09-15 | 8541290000 | TRAHZISTORY is mounted on the printed circuit board is used for surface mounting in switching equipment to create the necessary level of tension in electric TSEPYAH.NE ARE photoresistor. : TYPE SEMICONDUCTOR-3-X KANALNYY.MOSCHN | *** | CHINA | 0.8 | 519,17 | *** | ***** | ***** |