DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | TRAHZISTORY SEMICONDUCTOR Bipolar POWER, HIGH. MAXIMUM power dissipation 940 Tues PURPOSE: inverters, switching power supplies. SCOPE: AUTOMATED SYSTEMS AND CONTROL CIVIL industrial: BI | *** | FRANCE | 2.4 | 318,17 | *** | ***** | ***** |
2017-09-01 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power 100 W, the voltage source-drain 100 V, the drain current of 25 A, HULL TYPE TO-252-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | CHINA | 1.26 | 683,79 | *** | ***** | ***** |
2017-09-02 | 8541409000 | Photosensitive semiconductor modules for repair and maintenance equipment Company SONY: POWER BUTTON-SWITCH ASSEMBLY WITH CONTROL photosensors the paper mounted on the board 5V, for professional printers, SON | *** | CHINA | 0.2 | 66,3 | *** | ***** | ***** |
2017-09-04 | 8541290000 | TRAHZISTORY SEMICONDUCTOR, half-bridge, bipolar, high voltage. PURPOSE: inverters, switching power supplies. SCOPE: AUTOMATED SYSTEMS AND CONTROL CIVIL PROMYSHLENNYHOBEKTOV. Is not discrete: AP | *** | PHILIPPINES | 6 | 1760 | *** | ***** | ***** |
2017-09-05 | 8541210000 | UNIVERSAL BIPOLAR TRANSISTORS: CILOVYE N-channel field "BSS123NH6327XTSA1" C 0,36VT power dissipation. TYPE SEMICONDUCTOR - SILICON. Designed for use in low-power switch applications. : Transistors. INFINEON TECHNOLOGIES AG | *** | CHINA | 1.65 | 699,37 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Power MOSFET "STD12NF06LT4" Series, STRIP FETT With 30W power dissipation, drain-source voltage 60V, gate-source voltage 16V, continuous leakage current of 12A intended for use in the device switching. TYPE SEMICONDUCTOR: MOS | *** | CHINA | 1.28 | 754,38 | *** | ***** | ***** |
2017-09-05 | 8541409000 | Photosensitive semiconductor devices used in manufacturing printed circuit boards for Switching Power Supply: PCP ARTICLE M100017. TOTAL 908SHTUK in carton of the box. : PRIMECH INDUSTRIAL SUPPLIES (M) SDN BHD, MALAYSIA PRIMECH PRIMECH M | *** | TAIWAN CHINA | 1.58 | 51,5 | *** | ***** | ***** |
2017-09-05 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation of 240 W, the voltage source-drain 600, drain current 30.8 A, Body type 4-DFN-EP, CLASSIFICATION CODE 3417831 is for use in switching power supply, CONVERT | *** | COSTA RICA | 0 | 50,56 | *** | ***** | ***** |
2017-09-06 | 8541210000 | P-CHANNEL POWER MOS TRANSISTORS "FDN5618P", C 0.5 Tu power dissipation, drain-source voltage 60 V, gate-source voltage 20B, Imp. Drain current 10A, Predna. FOR A current converters, switches, loads diagram of the control PI: TA | *** | PHILIPPINES | 0.13 | 165 | *** | ***** | ***** |
2017-09-06 | 8541401000 | Light emitting diodes For installation in cases of programmable controllers are not equipped with power supply, wire, switches, in-INDIV packaging to cardboard boxes, plastic bags Light emitting diodes Light emitting diodes ART. SAMPLE-GREE | *** | TAIWAN CHINA | 0.7 | 377,66 | *** | ***** | ***** |