| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541290000 | TRAHZISTORY SEMICONDUCTOR Bipolar POWER, HIGH. MAXIMUM power dissipation 940 Tues PURPOSE: inverters, switching power supplies. SCOPE: AUTOMATED SYSTEMS AND CONTROL CIVIL industrial: BI | *** | FRANCE | 2.4 | 318,17 | *** | ***** | ***** |
| 2017-09-01 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power 100 W, the voltage source-drain 100 V, the drain current of 25 A, HULL TYPE TO-252-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | CHINA | 1.26 | 683,79 | *** | ***** | ***** |
| 2017-09-04 | 8541290000 | TRAHZISTORY SEMICONDUCTOR, half-bridge, bipolar, high voltage. PURPOSE: inverters, switching power supplies. SCOPE: AUTOMATED SYSTEMS AND CONTROL CIVIL PROMYSHLENNYHOBEKTOV. Is not discrete: AP | *** | PHILIPPINES | 6 | 1760 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Power MOSFET "STD12NF06LT4" Series, STRIP FETT With 30W power dissipation, drain-source voltage 60V, gate-source voltage 16V, continuous leakage current of 12A intended for use in the device switching. TYPE SEMICONDUCTOR: MOS | *** | CHINA | 1.28 | 754,38 | *** | ***** | ***** |
| 2017-09-05 | 8541409000 | Photosensitive semiconductor devices used in manufacturing printed circuit boards for Switching Power Supply: PCP ARTICLE M100017. TOTAL 908SHTUK in carton of the box. : PRIMECH INDUSTRIAL SUPPLIES (M) SDN BHD, MALAYSIA PRIMECH PRIMECH M | *** | TAIWAN CHINA | 1.58 | 51,5 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation of 240 W, the voltage source-drain 600, drain current 30.8 A, Body type 4-DFN-EP, CLASSIFICATION CODE 3417831 is for use in switching power supply, CONVERT | *** | COSTA RICA | 0 | 50,56 | *** | ***** | ***** |
| 2017-09-06 | 8541100009 | ELECTRONIC COMPONENTS FOR GENERAL USE FOR OWN PRODUCTION UNITS ELECTRONIC EQUIPMENT - DIODES TVS DIODE, VOLTAGE 15.3V, 600W POWER SWITCHING DIODE, VOLTAGE 75-100V, CURRENT 0.2A Zener diodes, voltage 5.1V, MOSCHNOS | *** | CHINA | 2.05 | 355,41 | *** | ***** | ***** |
| 2017-09-07 | 8541100009 | Zener diode. RATED VOLTAGE 3,9-100 V. CURRENT 5-100 MA. Maximum Power Dissipation 1.3 Tues. Used in electrical engineering. DC converters, switching. MAXIMUM forward voltage 1.3 V. The maximum DIRECT CURRENT DIMENSIONS 8 A. 8.76 X 10.54 X 4. | *** | UNITED KINGDOM | 0.03 | 13,12 | *** | ***** | ***** |
| 2017-09-07 | 8541409000 | SEMICONDUCTOR photosensitive devices / Optocouplers MADE phototransistor and an infrared LED GAAS, placed in the same housing, SERIES TLP291; APPLY programmable logic controllers, switching power supply, TLP291 (GRH | *** | THAILAND | 0.5 | 703,99 | *** | ***** | ***** |
| 2017-09-10 | 8541290000 | TRANSISTORS Power Dissipation 1.65 BT is packaged in a plastic coil 2: APPLICATION: bipolar NPN transistors with low voltage saturation PBSS4021NX designed for use in switching circuits and load transfer, the device with battery | *** | CHINA | 0.12 | 597 | *** | ***** | ***** |