DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-17 | 8541210000 | TRANSISTORS Power Dissipation 0.395 BT TYPE SEMICONDUCTOR SILICON-: USAGE PATTERNS SWITCHING POWER SUPPLY, DISTRIBUTION OF ELECTRICITY SUPPLY DRIVERS SVETODIODOV.VID SEMICONDUCTOR -KREMNIEVY, VIEW PEREHODA- N, IS USED FOR THE PURPOSE OF PRODUCTION | *** | CHINA | 0.02 | 185,34 | *** | ***** | ***** |
2017-09-17 | 8541210000 | TRANSISTORS Power Dissipation 0.325 BT TYPE SEMICONDUCTOR SILICON-: MOSFET N-CHANNEL WITH NX7002AK are intended for use in the control circuit RELAY, SWITCHING, HIGH AS A KEY FOR SWITCHING LOAD IN THE LOWER FL | *** | CHINA | 0.25 | 313,56 | *** | ***** | ***** |
2017-09-17 | 8541210000 | TRANSISTORS Power Dissipation 0.325 BT TYPE SEMICONDUCTOR SILICON-: MOSFET N-CHANNEL WITH NX7002AK are intended for use in the control circuit RELAY, SWITCHING, HIGH AS A KEY FOR SWITCHING LOAD IN THE LOWER FL | *** | CHINA | 0.19 | 235,17 | *** | ***** | ***** |
2017-09-24 | 8541210000 | TRANSISTORS Power Dissipation 0.25 W TYPE SEMICONDUCTOR SILICON-: APPLY TO COUNTER ENERGORESURSOV.VID TRANSITION - NPN .VID POLUPROVODNIKA- KREMNIEVYY.PRIMENENIE: - suitable for use in switching circuits and amplifiers GENERAL PURPOSE .SVOYS | *** | CHINA | 0.04 | 44,7 | *** | ***** | ***** |
2017-09-24 | 8541210000 | TRANSISTORS Power Dissipation 0.25 W TYPE SEMICONDUCTOR SILICON-: APPLY TO BLOCK ignition interlock CAR VAZ.VID SEMICONDUCTOR - KREMNIEVYY.VID TRANSITION - PNP.PRIMENENIE: SWITCHING AND ENHANCEMENT IN ELECTRIC CIRCUITS GENERAL | *** | CHINA | 0.15 | 124,74 | *** | ***** | ***** |
2017-09-24 | 8541210000 | TRANSISTORS Power Dissipation 0.25 W TYPE SEMICONDUCTOR SILICON-: APPLY TO BLOCK ignition interlock CAR VAZ.VID SEMICONDUCTOR - KREMNIEVYY.VID TRANSITION - PNP.PRIMENENIE: SWITCHING AND ENHANCEMENT IN ELECTRIC CIRCUITS GENERAL | *** | CHINA | 1.43 | 1191,36 | *** | ***** | ***** |
2017-09-26 | 8541210000 | TRANSISTORS 0.7VT power dissipation, which is a radio-electronic components of a semiconductor material is used for amplifying, oscillating, switching and converting electrical signals. TRANSISTORS APPLY TO AMPLIFIER: TPA | *** | CHINA | 21.57 | 6938,19 | *** | ***** | ***** |
2017-09-27 | 8541210000 | Bipolar transistors power dissipation 0.0002 BT MODEL BC846BPN, ARTICLE BC846BPN.115 - 100 PCS. CUSTOM PACKAGING - Cut Tape. NOT SCRAP ELECTRIC, DO NOT WASTE. Used in the construction of switching power supplies in Telecom: OM | *** | MALAYSIA | 0.11 | 28,46 | *** | ***** | ***** |
2017-09-27 | 8541210000 | MOSFET power dissipation 0.5W MODEL FDN304, PART FDN304PZ - 30 PCS. CUSTOM PACKAGING - Cut Tape. NOT SCRAP ELECTRIC, DO NOT WASTE. Used in the construction of switching power supplies in telecommunication A: BO | *** | MALAYSIA | 0.01 | 17,29 | *** | ***** | ***** |
2017-11-05 | 8541210000 | TRANSISTORS 0.7VT power dissipation, which is a radio-electronic components of a semiconductor material is used for amplifying, oscillating, switching and converting electrical SIGNALOV.TRANZISTORY APPLY amplifying | ABSENT | CHINA | 8.2 | 3999,9 | SHENZHEN | ***** | ***** |