DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 3917320009 | TUBE, NOT REINFORCED OR NOT combined with other materials, without fittings MOD. "TUBE PHARMED BPT 3 X 5 ', ART. "44264851" - opaque light yellow Pharmed silicone tube, OD 12.7 mm, internal - 7.62 MM. DRAIN PIPE Conti | *** | JAPAN | 0.6 | 319,82 | *** | ***** | ***** |
2017-09-01 | 3214101009 | Gasket Threebond, Composition: mixture of silicone and silane-oximes 45-55% calcium carbonate and additives 45-55%. The plastic tubes 330ml gasket Threebond, Composition: mixture of silicone and silane-oximes 45-55% calcium carbonate, and PR | *** | JAPAN | 2.52 | 198,85 | *** | ***** | ***** |
2017-09-01 | 3917320009 | TUBE, NOT REINFORCED OR NOT combined with other materials, without fittings MOD. "TUBE PHARMED BPT 3 X 5 ', ART. "44264851" - opaque light yellow Pharmed silicone tube, OD 12.7 mm, internal - 7.62 MM. DRAIN PIPE Conti | *** | JAPAN | 0.6 | 319,82 | *** | ***** | ***** |
2017-09-01 | 3926909709 | Conductive, anisotropic silicon gasket thicknesses. 50MK The belt width of 29.5 mm in the paper substrate, ART. EH8030-50-160 roll (1 ROLL 100 M). THIS PRODUCT IN THE PRODUCTION OF SMART cards are installed between the module and the antenna. UNDER: IMPACT | *** | JAPAN | 73.6 | 24244,89 | *** | ***** | ***** |
2017-09-01 | 3926909709 | Conductive, anisotropic silicon gasket thicknesses. 50MK The belt width of 29.5 mm in the paper substrate, ART. EH8030-50-160 roll (1 ROLL 100 M). THIS PRODUCT IN THE PRODUCTION OF SMART cards are installed between the module and the antenna. UNDER: IMPACT | *** | JAPAN | 73.6 | 24244,89 | *** | ***** | ***** |
2017-09-01 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR dissipation of 34W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) INFINEON TECHNOLOGIES AG INFINE | *** | JAPAN | 0.04 | 25,25 | *** | ***** | ***** |
2017-09-01 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,54VT for consumer electronic devices. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) INFINEON TECHNOLOGIES AG INFI | *** | JAPAN | 0 | 2,24 | *** | ***** | ***** |
2017-09-01 | 8541100009 | MODULES DIODES MODULE FOR SEMICONDUCTOR DIODES consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packaged in a plastic container ST MICROELECTRONICS ST STPS20170CT STPS20170CT STPS20170CT 35 | *** | JAPAN | 0.1 | 56,64 | *** | ***** | ***** |
2017-09-01 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,31VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel DIOTEC SEMICONDUCTOR AG DIOTEC BC807-40 | *** | JAPAN | 0.01 | 5,91 | *** | ***** | ***** |
2017-09-01 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation of 110 W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA | *** | JAPAN | 2.83 | 804,6 | *** | ***** | ***** |