DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541210000 | TRANSISTOR SEMICONDUCTOR C Power Dissipation 0.36 BT TYPE SEMICONDUCTOR - single-element, is designed to control the current in an electric circuit. MODEL T FET / BSS138 ART: A2C00000609 INFINEON TECHNOLOGIES INFINEON 6000 | *** | MALAYSIA | 0.2 | 149,93 | *** | ***** | ***** |
2017-09-01 | 8541210000 | SOBORKA TRANSISTORS WITH TWO fixed resistor assembly is in the polymeric housing with a projecting contact. POWER RASSESVANIYA 0.4 Tues. MODEL PUMD3,125 ART: A2C00039778 NXP NXP 10000 | *** | MALAYSIA | 0.9 | 224,54 | *** | ***** | ***** |
2017-09-01 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,25VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel NEXPERIA BV NEXPERIA PDTC114ET.215 PDT | *** | MALAYSIA | 3.6 | 913,31 | *** | ***** | ***** |
2017-09-01 | 8541409000 | SEMICONDUCTOR DEVICE Photosensitive gathered in the enclosure with the conclusion not incorporated in the panel and not collected in the module for industrial electronics: photon-coupled transistor (phototransistor) ARTICLE HCPL-063A-000E-200 pcs. : "AVAGO TECHNOLOGIES LTD" FROM | *** | MALAYSIA | 0.05 | 522,16 | *** | ***** | ***** |
2017-09-01 | 8541409000 | SEMICONDUCTOR DEVICE Photosensitive gathered in the enclosure with the conclusion not incorporated in the panel and not collected in the module for industrial electronics: one transistor optocoupler ARTICLE CNY75B-500pcs. : VISHAY INTERTECHNOLOGY INC. ABSENT 0 | *** | MALAYSIA | 0.43 | 70,88 | *** | ***** | ***** |
2017-09-01 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power dissipation 1W MORE SYSTEMS FOR INDUSTRIAL ELECTRONICS: Field transistors Single, free rate, power dissipation 70W ARTICLE STD15NF10T4-1710SHT. : STMICROELECTRONICS CHINA ABSENT 0 | *** | MALAYSIA | 0.99 | 416,15 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current 34 A, | *** | MALAYSIA | 1.62 | 1512 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in electronic equipment RADIO: FIELD insulated gate, NPN-CHANNEL, power dissipation 0.3W max. Allowable current of 0.1 A, MAK | *** | MALAYSIA | 0.11 | 488,21 | *** | ***** | ***** |
2017-09-02 | 8541210000 | Bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 80 V, the maximum collector current of 1.5 A, power dissipation 0.9W, CASING TO-226-3. LOCATED in the tape is packaged in a plastic bag. : STMICROELECTRON | *** | MALAYSIA | 0.2 | 77,26 | *** | ***** | ***** |
2017-09-04 | 8541210000 | Semiconductor devices: transistors, phototransistor EXCEPT TYPE SEMICONDUCTOR - silicon, for PCB mounting electronic devices, power dissipation 0.30 Tues. : NEXPERIA NEXPERIA NEXPERIA PUMB10,115 NO 15000 | *** | MALAYSIA | 0.58 | 300 | *** | ***** | ***** |