DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power dissipation 1W MORE SYSTEMS FOR INDUSTRIAL ELECTRONICS: Field transistors Single, free rate, power dissipation 70W ARTICLE STD15NF10T4-1710SHT. : STMICROELECTRONICS CHINA ABSENT 0 | *** | MALAYSIA | 0.99 | 416,15 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current 34 A, | *** | MALAYSIA | 1.62 | 1512 | *** | ***** | ***** |
2017-09-04 | 8541290000 | ELECTRIC SEMICONDUCTOR DEVICES SHALL photosensitive devices used in manufacturing the PCB: transistor TYPE SEMICONDUCTOR - silicon, power dissipation 890VT: IXYS CORP. IXYS IXYS IXFN170N30P NO 1200 | *** | MALAYSIA | 54.35 | 17160 | *** | ***** | ***** |
2017-09-06 | 8541290000 | Components for assembly TRACTION INVERTER (inverter OWN NEEDS) for the project SUNRISE, imported for use in custom manufacturing (NOT SCRAP ELECTRIC NOT MILITARY) is transported to the PART Transistor | *** | MALAYSIA | 17.7 | 19033,38 | *** | ***** | ***** |
2017-09-06 | 8541290000 | Spare parts for REMONTA- semiconductor transistor: / NOT SCRAP / / NOT WASTE / NOT FOR EQUIPMENT. WORKS. In potentially explosive atmospheres / / NOT FOR VEHICLES / NOT MILITARY / / NOT DUAL-USE / semiconductor transistor power dissipation of 10 W, | *** | MALAYSIA | 0.05 | 45,73 | *** | ***** | ***** |
2017-09-06 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0.02 | 23,62 | *** | ***** | ***** |
2017-09-06 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0 | 8,45 | *** | ***** | ***** |
2017-09-06 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0.04 | 96,02 | *** | ***** | ***** |
2017-09-06 | 8541290000 | SINGLE TRANSISTOR 1W power dissipation MORE, NOT A high-frequency used in instruments Industrial electronics: ART.BD13816STU-961SHT (MOSCHN.8VT); : FAIRCHILD SEMICONDUCTOR NO FSC 0 | *** | MALAYSIA | 1.5 | 129,1 | *** | ***** | ***** |
2017-09-08 | 8541290000 | TRANSISTORS EXCEPT phototransistor: MAXIMUM MOSFET drain-source voltage USI, B: 400 MAX CURRENT DRAIN-SOURCE WITH ISI MAX 25 C, A:. 10, the maximum gate-source voltage UZI MAX, V:. 30 RESISTANCE IN OPEN CHANNEL STATE BK RSI | *** | MALAYSIA | 9.56 | 844,33 | *** | ***** | ***** |