DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-06 | 8541290000 | Transistors, EXCEPT phototransistor transistors for PCB mounting NOT SCRAP ELECTRIC. Not for military purposes. HAS encryption function and cryptography. INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IRF7306PBF 114 | *** | UNITED KINGDOM | 0.03 | 32,06 | *** | ***** | ***** |
2017-09-07 | 8541290000 | NPN bipolar transistor type. Maximum operating voltage to 60V, maximum current 6A. Power Dissipation 3W. DIMENSIONS: 1.65X6.55X3.55MM. Used for electrical purposes: DIODESZETEX DIODES DIODESZETEX 169-4139 FZT851TA 15 | *** | UNITED KINGDOM | 0.08 | 6,77 | *** | ***** | ***** |
2017-09-07 | 8541409000 | Optocouplers. It is an assembly of LED and a phototransistor in one of the plastic housing, transmitted signal from the LED to the FOTOTRANZITORU. Forward voltage 4.5-10V, CURRENT 10MKA. ELECTRICAL EQUIPMENT ARE NOT CROWBAR have no function of cryptography: AI | *** | UNITED KINGDOM | 0.01 | 17,52 | *** | ***** | ***** |
2017-09-07 | 8541290000 | N-channel MOS transistor. Used in electrical engineering. Drain Source Voltage 250V, 52A CURRENT. 300W power dissipation. SIZES: 15.75 X 5.15 X 20.15MM: STMICROELECTRONICS ST ST 687-5279 STW52NK25Z 2 | *** | UNITED KINGDOM | 0.01 | 3,86 | *** | ***** | ***** |
2017-09-07 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET P-CHANNEL, power dissipation 1.2W, DRAIN-SOURCE VOLTAGE 60 V, the drain current of 7.8 A HULL TYPE 8-SOIC, 6,340,128 CLASSIFICATION CODE FOR PCB RADIO EQUIPMENT DIODES DIODES DM | *** | UNITED KINGDOM | 0.03 | 108,87 | *** | ***** | ***** |
2017-09-14 | 8541290000 | Bipolar PNP transistors. Maximum voltage 80V Maximum Power Dissipation 12.5 Tues. MAX CURRENT 1.5 A Size 8 X 3.25 X 11MM. Used in electrical N-channel MOS transistor. Maximum voltage - 100V. MAXIMA | *** | UNITED KINGDOM | 0.09 | 12,79 | *** | ***** | ***** |
2017-09-14 | 8541210000 | Bipolar transistors NPN TRANSISTOR (EPITAXIAL). The maximum voltage of 65 V. The maximum power dissipation of 500 mW. MAX 100 mA. DIMENSIONS 4.58 X 3.86 X 4.58MM. Used for electrical P-channel MOS transistors. MAXIMUM NAP | *** | UNITED KINGDOM | 0.02 | 8,34 | *** | ***** | ***** |
2017-09-14 | 8541210000 | BIPOLAR PNP transistors. The maximum voltage of 65 V. The maximum power dissipation of 500 mW. MAX 100 mA. DIMENSIONS 4.58 X 3.86 X 4.58MM. Used for electrical purposes: FAIRCHILD SEMICONDUCTOR CORPORATION FAIRCHILD FAIRCHILD SEMICONDUCTOR 7 | *** | UNITED KINGDOM | 0.03 | 4,4 | *** | ***** | ***** |
2017-09-14 | 8541210000 | Bipolar transistors NPN transistors. The maximum voltage of 45 V. The maximum power dissipation of 500 mW. MAX 100 mA. DIMENSIONS 5.1 X 4.1 X 4.7MM. Used in electrical NPN BIPOLAR TRANSISTOR (EPITAXIAL). MAXIMUM VOLTAGE | *** | UNITED KINGDOM | 0.1 | 11,82 | *** | ***** | ***** |
2017-09-14 | 8541210000 | TRANSISTORS low-power, FOR RADIO EQUIPMENT TRANSISTORS low-power 0.25 Tues GAIN: 80 ... 250 Polarity: NPN HULL TYPE: SOT-23 collector current: 600mA transmission frequency: 100 MHz emitter-collector voltage of 160 V MO SCATTERING | *** | UNITED KINGDOM | 0.01 | 0,36 | *** | ***** | ***** |