Transistor Import Data of Russia

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Lookup import statistics of Transistor under HS Code 8541290000, which Russia imports from United Kingdom. Study market price & market size of Transistor along with market share of Russian companies importing Transistor from United Kingdom

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-09-06	8541290000	Transistors, EXCEPT phototransistor transistors for PCB mounting NOT SCRAP ELECTRIC. Not for military purposes. HAS encryption function and cryptography. INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IRF7306PBF 114	***	UNITED KINGDOM	0.03	32,06	***	*****	*****
2017-09-07	8541290000	NPN bipolar transistor type. Maximum operating voltage to 60V, maximum current 6A. Power Dissipation 3W. DIMENSIONS: 1.65X6.55X3.55MM. Used for electrical purposes: DIODESZETEX DIODES DIODESZETEX 169-4139 FZT851TA 15	***	UNITED KINGDOM	0.08	6,77	***	*****	*****
2017-09-07	8541290000	N-channel MOS transistor. Used in electrical engineering. Drain Source Voltage 250V, 52A CURRENT. 300W power dissipation. SIZES: 15.75 X 5.15 X 20.15MM: STMICROELECTRONICS ST ST 687-5279 STW52NK25Z 2	***	UNITED KINGDOM	0.01	3,86	***	*****	*****
2017-09-07	8541290000	SEMICONDUCTOR TRANSISTORS: MOSFET P-CHANNEL, power dissipation 1.2W, DRAIN-SOURCE VOLTAGE 60 V, the drain current of 7.8 A HULL TYPE 8-SOIC, 6,340,128 CLASSIFICATION CODE FOR PCB RADIO EQUIPMENT DIODES DIODES DM	***	UNITED KINGDOM	0.03	108,87	***	*****	*****
2017-09-14	8541290000	Bipolar PNP transistors. Maximum voltage 80V Maximum Power Dissipation 12.5 Tues. MAX CURRENT 1.5 A Size 8 X 3.25 X 11MM. Used in electrical N-channel MOS transistor. Maximum voltage - 100V. MAXIMA	***	UNITED KINGDOM	0.09	12,79	***	*****	*****
2017-09-25	8541290000	SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, NPN-CHANNEL, power dissipation 10	***	UNITED KINGDOM	4.35	98,54	***	*****	*****
2017-09-25	8541290000	SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 5 A,	***	UNITED KINGDOM	3.17	93,85	***	*****	*****
2017-09-25	8541290000	SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 2.5 A	***	UNITED KINGDOM	0.03	0,7	***	*****	*****
2017-09-27	8541290000	TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS RADIOFREQUENCY MOSFETs with channel N TYPE SMD USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. The breakdown voltage of the drain-source 40	***	UNITED KINGDOM	0.69	2232,97	***	*****	*****
2017-09-28	8541290000	N-channel MOS transistor. The maximum voltage of 300 V. MAX CURRENT 94 A Maximum Power Dissipation 1.04 ITC. SERIES HIPERFET, POLAR3. SIZE 16.26 X 5.3 X 21.46MM. NOT AN ELECTRICAL CROWBAR. HAS FUNCTIONS cryptography (W: IF	***	UNITED KINGDOM	0.19	191,18	***	*****	*****

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Our transistor import data of Russia and market research report covers market priceof transistor and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of transistor in Russia. Few shipment records with a small number of important columns from Russia import data of transistor are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of transistor. To view more shipment records of transistor import data of Russia, you can set a filter by Country Name, HS Code and Place.

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