DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: | INFINEON | *** | 64.022 | 8640 | ST PETERSBURG | ***** | ***** |
2017-09-03 | 8541290000 | Semiconductor devices: transistors, for PCB mounting | VISHAY | *** | 58.57 | 22607,21 | ST PETERSBURG | ***** | ***** |
2017-09-11 | 8541290000 | Transistors, EXCEPT phototransistor SEMICONDUCTOR TRANSISTOR, for PCB mounting in industrial single-board computer, power dissipation 40 W TYPE SILICON POLUPROVODNIKA- | TOSHIBA | *** | 56.72 | 14070 | ST PETERSBURG | ***** | ***** |
2017-09-11 | 8541210000 | FIELD TRANSISTOR (COMPONENTS FOR ASSEMBLING A / M "HYUNDAI" (MODEL "SOLARIS", "I25", "VERNA", "RB", "ACCENT", "CRETA") AND "KIA RIO") | ABSENT | *** | 1066.79 | 38332,5 | ST PETERSBURG | ***** | ***** |
2017-09-14 | 8529909209 | TFT-LCD MODULE (liquid crystal display is made of thin film transistor). It includes a liquid crystal panel, the M / driver circuit, CHAIN ​​MANAGEMENT AND PODSVETKU.PREDNAZNACHEN for use in industrial equipment. NOT | MITSUBISHI ELECTRIC | *** | 150 | 46110,78 | ST PETERSBURG | ***** | ***** |
2017-09-17 | 8541290000 | AVERAGE POWER TRANSISTORS: N-CHANNEL "TK10A80W, S4X (S" COMMON dissipation 40W, collector-emitter voltage 80V and the breakdown voltage of the drain-source 800V TYPE SEMICONDUCTOR - SILICON.. | TOSHIBA | *** | 107.645 | 23370 | ST PETERSBURG | ***** | ***** |
2017-09-19 | 8541210000 | FIELD TRANSISTOR (COMPONENTS FOR ASSEMBLING A / M "HYUNDAI" (MODEL "SOLARIS", "I25", "VERNA", "RB", "ACCENT", "CRETA") AND "KIA RIO") | ABSENT | *** | 739.8 | 26932,5 | ST PETERSBURG | ***** | ***** |
2017-09-26 | 8541290000 | UNIVERSAL Bipolar Transistor "VD140-16" With the PNP-TRANSITION, with a total power dissipation 12.5 BT, collector-emitter voltage 80V, 1.5A DIRECT CURRENT COLLECTOR, intended for use in linear amplifiers and switches APPENDIX | ST | *** | 66.3 | 2429,43 | ST PETERSBURG | ***** | ***** |
2017-09-27 | 8541290000 | MODULES insulated-gate bipolar transistor (IGBT): "BSM200GA170DLC" With the collector-emitter voltage 1700V, C 1920VT power dissipation; "FF300R17KE4" With the collector-emitter voltage 1700V, C Power Dissipation 1800 W; "FF450R12KT4" | INFINEON | *** | 225.057 | 43141,25 | ST PETERSBURG | ***** | ***** |
2017-09-27 | 8541409000 | SEMICONDUCTOR photosensitive devices / Optocouplers MADE phototransistor and an infrared LED, placed in the same housing, SERIES TLP785; APPLY office supplies, household appliances, solid state relays, switches | TOSHIBA | *** | 50 | 7095,6 | ST PETERSBURG | ***** | ***** |