DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-05 | 8542399090 | ELECTRONIC CIRCUIT, Integrated and hybrid contains. Passive components (resistors, capacitors) and active elements (diodes, integrated circuits, transistors, semiconductors) to collect at releasably on a single insulating substrate products used PANEL Electronic integrated circuits | *** | ITALY | 0.12 | 188,04 | *** | ***** | ***** |
2017-09-05 | 8542399090 | ELECTRONIC CIRCUIT, Integrated and hybrid contains. Passive components (resistors, capacitors) and active elements (diodes, integrated circuits, transistors, semiconductors) to collect at releasably on a single insulating substrate products used PANEL Electronic integrated circuits | *** | ITALY | 0.12 | 184,38 | *** | ***** | ***** |
2017-09-11 | 8541290000 | COMPONENTS FOR MEDICAL X-ray equipment: semiconductor products IGBT modules (the article is an insulated-gate bipolar transistor - TROHELEKTRODNY power semiconductor devices that combine two transistors IN ONE IN | *** | ITALY | 1.2 | 393,59 | *** | ***** | ***** |
2017-09-13 | 8542399090 | ELECTRONIC CIRCUITS, Integrated and hybrid, SODERZH.PASSIVNYE elements (resistors, capacitors) and active elements (diodes, integrated circuits, transistors, semiconductors) to collect at releasably on a single insulating substrate is inserted into a diagram of an electronic integrals | *** | ITALY | 0.09 | 179,92 | *** | ***** | ***** |
2017-09-13 | 8542399090 | ELECTRONIC CIRCUITS, Integrated and hybrid, SODERZH.PASSIVNYE elements (resistors, capacitors) and active elements (diodes, integrated circuits, transistors, semiconductors) to collect at releasably on a single insulating substrate is inserted into a diagram of an electronic integrals | *** | ITALY | 0.01 | 12,58 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistor modules transistor module (IGBT) BASED TRANSISTORS, A PART C 2-wheeling diode. MAXIMUM POWER OF DISPERSION 790 BT OPERATING CURRENT IC NOM = 150A / ICRM = 300A, OPERATING VOLTAGE 1200V. It is designed for use in inverters | *** | ITALY | 12.55 | 2260,36 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistor modules IGBT modules TRANZISTORNYE- SEMICONDUCTOR DEVICE, POWER SUPPLY TO INCREASE IN INDUSTRIAL ELECTRONIC SYSTEMS. VOLTAGE 1200V NOT MILITARY. / TRANSISTORS / IGBT MODULE transistor module (IGBT / IGBT) STRUCTURES | *** | ITALY | 53.87 | 9851,95 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistor modules transistor module (IGBT) BASED TRANSISTORS, A PART C 2-wheeling diode. MAXIMUM power dissipation of 6.25 KW, the operating voltage 1700 V intended for use in inverters, circuit breaker and so on. NOT SCRAP AL | *** | ITALY | 29.6 | 8209,21 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistor modules IGBT modules. "Transistor modules - ON IGBT-BASED TRANSISTORS ARE DESIGNED FOR HIGH SWITCHING IN THE COMPOSITION OF POWER DRIVE ELECTRIC MOTORS AND STATIC CONVERTERS FOR A inverter, interrupting.. | *** | ITALY | 442.4 | 110335,49 | *** | ***** | ***** |
2017-09-20 | 8541210000 | TRANSISTORS MOSFETs are designed for VHF / UHF RF FREQUENCY AMPLIFIERS. 100 MW. / TRANSISTORS / TRANSISTOR MITSUBISHI ELECTRIC CORPORATION MITSUBISHI ELECTRIC RF MOS RD01MUS1-T113 3000 | *** | ITALY | 0.6 | 1262,65 | *** | ***** | ***** |