DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 8541210000 | TRANSISTOR, P / N NX3008NBKS, MOS transistors, the number of channels 2, the breakdown voltage of the drain-source 30, continuous current LEAKAGE 350 MA - 1,4 SOURCE DRAIN RESISTANCE OM VOLTAGE gate-source 8, the minimum operating temperature - 55 C, MAX: Working | *** | PHILIPPINES | 0.24 | 606,13 | *** | ***** | ***** |
2017-09-04 | 8541290000 | Transistors, EXCEPT phototransistor (SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. TRANSISTORS Power Dissipation 2 W for surface mounting on printed circuit boards MACOM NO MRF275G 12 MACOM NPT1012 NO 10 | *** | PHILIPPINES | 0.68 | 6130,83 | *** | ***** | ***** |
2017-09-04 | 8541290000 | Transistors, EXCEPT phototransistor (SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. TRANSISTORS Power Dissipation 2 W for surface mounting on printed circuit boards NXP NO MRFE6VS25LR5 6 | *** | PHILIPPINES | 0.01 | 661,04 | *** | ***** | ***** |
2017-09-05 | 8541210000 | Transistors, power dissipation 0.25W for the production of cash-handling equipment, 215: NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND DO NOT DOUBLE PURPOSE; NOT for equipment operating in explosive atmospheres / NXP NXP BC817-40 9000 | *** | PHILIPPINES | 0.42 | 72 | *** | ***** | ***** |
2017-09-06 | 8541210000 | P-CHANNEL POWER MOS TRANSISTORS "FDN5618P", C 0.5 Tu power dissipation, drain-source voltage 60 V, gate-source voltage 20B, Imp. Drain current 10A, Predna. FOR A current converters, switches, loads diagram of the control PI: TA | *** | PHILIPPINES | 0.13 | 165 | *** | ***** | ***** |
2017-09-06 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source of 200 V, 372 A LEAKAGE CURRENT, power dissipation | *** | PHILIPPINES | 36 | 10731 | *** | ***** | ***** |
2017-09-06 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS RADIOFREQUENCY MOSFETs with channel N TYPE FOR MOUNTING HOLE PCB HELD DEVICES FOR INDUSTRIAL ELECTRONICS, POWER scattering | *** | PHILIPPINES | 1.69 | 1288,73 | *** | ***** | ***** |
2017-09-08 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in electronic equipment, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, MOSFET, N-CHANNEL, power P | *** | PHILIPPINES | 0.3 | 187,04 | *** | ***** | ***** |
2017-09-08 | 8541290000 | TRANSISTORS POLUPRODNIKOVYE flint CLASS 1W power dissipation MORE ARE Sets of uninterruptible power supplies TRADEMARK "EATON": UPS TRANSISTOR "COOPER CROUSE-HINDS GMBH", GERMANY "EATON" 1021761 IGBT 3X50A 1200V HB SKIIP2 R | *** | PHILIPPINES | 1.8 | 631,98 | *** | ***** | ***** |
2017-09-10 | 8541290000 | TRANSISTORS Power Dissipation 1.35 BT: TYPE SEMICONDUCTOR - SILICON. TRANSITION TYPE - N- KANALNYY.PTOT = 1.35 VT.SVOYSTVA: maximum drain current to 2.5 A, working voltage up to 600V; APPLICATION: The POWER SOURCE FOR COMPUTER .ISPOLZUETS | *** | PHILIPPINES | 0.21 | 1355,6 | *** | ***** | ***** |