| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-04 | 8541210000 | TRANSISTOR, P / N NX3008NBKS, MOS transistors, the number of channels 2, the breakdown voltage of the drain-source 30, continuous current LEAKAGE 350 MA - 1,4 SOURCE DRAIN RESISTANCE OM VOLTAGE gate-source 8, the minimum operating temperature - 55 C, MAX: Working | *** | PHILIPPINES | 0.24 | 606,13 | *** | ***** | ***** |
| 2017-09-05 | 8541210000 | Transistors, power dissipation 0.25W for the production of cash-handling equipment, 215: NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND DO NOT DOUBLE PURPOSE; NOT for equipment operating in explosive atmospheres / NXP NXP BC817-40 9000 | *** | PHILIPPINES | 0.42 | 72 | *** | ***** | ***** |
| 2017-09-06 | 8541210000 | P-CHANNEL POWER MOS TRANSISTORS "FDN5618P", C 0.5 Tu power dissipation, drain-source voltage 60 V, gate-source voltage 20B, Imp. Drain current 10A, Predna. FOR A current converters, switches, loads diagram of the control PI: TA | *** | PHILIPPINES | 0.13 | 165 | *** | ***** | ***** |
| 2017-09-20 | 8541210000 | Transistors, power dissipation less than 1 W, for navigation equipment that is not SCRAP ELECTRIC NOT MILITARY bipolar transistors for PCB mounting, power dissipation 0,25VT. Maximum collector current 0.2 A, WORKING | *** | PHILIPPINES | 0.08 | 50 | *** | ***** | ***** |
| 2017-09-23 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.35VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors MOSCHNOS | *** | PHILIPPINES | 3 | 327,8 | *** | ***** | ***** |
| 2017-09-23 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.31VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 NEXPERIA BV NEXPERIA BV BC8 | *** | PHILIPPINES | 1 | 133,71 | *** | ***** | ***** |
| 2017-09-23 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.31VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors MOSCHNOS | *** | PHILIPPINES | 3 | 348,65 | *** | ***** | ***** |
| 2017-09-23 | 8541210000 | Transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.2VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 FET power dissipation | *** | PHILIPPINES | 3 | 390,7 | *** | ***** | ***** |
| 2017-09-23 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, NES 62000: TRANSISTOR SEMICONDUCTOR power dissipation 0,73VT for consumer electronics. TYPE SEMICONDUCTOR - Singleton (silicon), packaged in blister packs Ribbon coil T | *** | PHILIPPINES | 2.8 | 905,88 | *** | ***** | ***** |
| 2017-09-23 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, NES 62000: TRANSISTOR SEMICONDUCTOR power dissipation 0,25VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) VISHAY INTERTECHNOLOGY INC. VISHAY UTS | *** | PHILIPPINES | 0.1 | 343,87 | *** | ***** | ***** |