| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541210000 | Semiconductors: transistors TYPE SEMICONDUCTOR - SILICON, ARE NOT phototransistors, power dissipation 0.3W: CALIFORNIA EASTERN LABORATORIES CEL CEL NE68519-T1-A otsutviem 3 | *** | CHINA | 0.01 | 3,87 | *** | ***** | ***** |
| 2017-09-01 | 8541210000 | TRANSISTORS power dissipation LESS THAN 1W. Maximum voltage 30V RESERVOIR: SHENZHEN QIYAO PLASTIC & ELECTRONIC CO, LTD.. MMUN2211LT1 (SOT-23) 1,000 | *** | CHINA | 0.06 | 171,3 | *** | ***** | ***** |
| 2017-09-01 | 8541290000 | Other transistors, phototransistors EXCEPT: TRANSISTOR, low-voltage power MOSFET, CASING - TO-263-3, QTY CHANNELS - 1 BREAKDOWN VOLTAGE CURRENT-SOURCE - - 40 V, DC CURRENT LEAKAGE / FLOW - - 100 A, RESISTANCE CURRENT-SOURCE - 3.5 mOHMS, VOLTAGE | *** | CHINA | 1.6 | 1704,5 | *** | ***** | ***** |
| 2017-09-01 | 8541290000 | Transistors. BC807-40 TRANSISTOR VOLTAGE 5V VDC. CASING SOT-23. 0.5 A. CURRENT TEMPERATURE +150 ° C. Power dissipation 0,3 W. BC846B TRANSISTOR VOLTAGE 6V VDC. CASING SOT-23. 0.1 A. CURRENT TEMPERATURE +150 ° C. SCATTERING POWER TRANSISTOR BC856 0,2 W. | *** | CHINA | 40.2 | 4536,71 | *** | ***** | ***** |
| 2017-09-01 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 50 W STMICROELECTRONICS WITHOUT TRADEMARK STMICROELECTRONICS STL11N3LLH6 B / N 2 | *** | CHINA | 0 | 2,3 | *** | ***** | ***** |
| 2017-09-01 | 8541210000 | Transistors with power dissipation LESS THAN 1W. (NO ELECTRICAL SCRAP) bipolar transistor power dissipation: 0.2 VT TOSHIBA WITHOUT TRADEMARK TOSHIBA RN1907 (T5L, F, T) B / N 20 | *** | CHINA | 0.01 | 3,24 | *** | ***** | ***** |
| 2017-09-01 | 8541210000 | Transistors with power dissipation LESS THAN 1W. (NO ELECTRICAL SCRAP) bipolar transistor power dissipation: 0.25 BT NEXPERIA WITHOUT TRADEMARK NEXPERIA BCV61C, 215 B / 40 H | *** | CHINA | 0.03 | 13,62 | *** | ***** | ***** |
| 2017-09-01 | 8541210000 | N-channel MOS transistors operating under saturated ASSEMBLY WITH BLOCKS temperature protection, overcurrent protection and voltage is intended to distribute power to the Car Alarm System MOSFET drain-source voltage Transit | *** | GERMANY | 0.2 | 639,29 | *** | ***** | ***** |
| 2017-09-01 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power 100 W, the voltage source-drain 100 V, the drain current of 25 A, HULL TYPE TO-252-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | CHINA | 1.26 | 683,79 | *** | ***** | ***** |
| 2017-09-01 | 8541210000 | SOBORKA TRANSISTORS WITH TWO fixed resistor assembly is in the polymeric housing with a projecting contact. POWER RASSESVANIYA 0.4 Tues. MODEL PUMD3,125 ART: A2C00039778 NXP NXP 10000 | *** | MALAYSIA | 0.9 | 224,54 | *** | ***** | ***** |