DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | Other transistors, phototransistors EXCEPT: TRANSISTOR, low-voltage power MOSFET, CASING - TO-263-3, QTY CHANNELS - 1 BREAKDOWN VOLTAGE CURRENT-SOURCE - - 40 V, DC CURRENT LEAKAGE / FLOW - - 100 A, RESISTANCE CURRENT-SOURCE - 3.5 mOHMS, VOLTAGE | *** | CHINA | 1.6 | 1704,5 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistors. BC807-40 TRANSISTOR VOLTAGE 5V VDC. CASING SOT-23. 0.5 A. CURRENT TEMPERATURE +150 ° C. Power dissipation 0,3 W. BC846B TRANSISTOR VOLTAGE 6V VDC. CASING SOT-23. 0.1 A. CURRENT TEMPERATURE +150 ° C. SCATTERING POWER TRANSISTOR BC856 0,2 W. | *** | CHINA | 40.2 | 4536,71 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 50 W STMICROELECTRONICS WITHOUT TRADEMARK STMICROELECTRONICS STL11N3LLH6 B / N 2 | *** | CHINA | 0 | 2,3 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET, the power dissipation 27.7 BT: bipolar transistor power dissipation 15W STMICROELECTRONICS WITHOUT TRADEMARK STMICROELECTRONICS STD2805T4 B / H 2 VISHA | *** | CHINA | 0.01 | 3,63 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 830 BT IXYS CORPORATION WITHOUT TRADEMARK IXYS IXTH130N20T B / 3 H | *** | CHINA | 0.01 | 12,72 | *** | ***** | ***** |
2017-09-01 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power 100 W, the voltage source-drain 100 V, the drain current of 25 A, HULL TYPE TO-252-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | CHINA | 1.26 | 683,79 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistors, EXCEPT phototransistor (SCRAP ELECTRIC OR ELECTRICAL COMPONENTS FOR CIVIL USE) SEMICONDUCTOR TRANSISTOR 80W power dissipation for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon | *** | CHINA | 6.05 | 411,06 | *** | ***** | ***** |
2017-09-01 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR 85W power dissipation for consumer electronic devices. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container TRANSISTOR SEMICONDUCTOR POWER PAC | *** | THAILAND | 2.2 | 333,4 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistor: MODULE TRANSISTOR SEMICONDUCTOR power dissipation 1,4VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container TRANSISTOR SEMICONDUCTOR MO | *** | THAILAND | 12.49 | 4537,86 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Transistor: IGBT module SEMICONDUCTOR TRANSISTORS Power dissipation 155W FOR INDUSTRIAL ELECTRONIC EQUIPMENT. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). --Cartoned INFINEON TECHNOLOGIES | *** | THAILAND | 0.44 | 88,76 | *** | ***** | ***** |